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  ld-mos Datasheet PDF File

For ld-mos Found Datasheets File :: 931    Search Time::2.031ms    
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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ...PACKAGE CHARACTERISTICS Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Sou...
Description POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    APT8030JN APT8035JN

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030JN APT8035JN
OCR Text ...PACKAGE CHARACTERISTICS Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Sou...
Description POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS V 800V 27.0A 0.30/0.35 Ohm

File Size 61.59K  /  4 Page

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    BUK7608-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7608-55
OCR Text ...ss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on d...MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semicondu...
Description TrenchMOS transistor Standard level FET

File Size 65.96K  /  8 Page

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    BUK9608-55

NXP Semiconductors
Philips Semiconductors
Part No. BUK9608-55
OCR Text ...ss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on d...MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semicondu...
Description TrenchMOS transistor Logic level FET

File Size 68.11K  /  8 Page

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    CA239 LM2901 CA0239E CA0239M96 CA139 CA139A CA339 LM3302M96 LM3302 LM339 CA0139E FN759 LM339N LM2901N CA239A CA0339E CA0

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. CA239 LM2901 CA0239E CA0239M96 CA139 CA139A CA339 LM3302M96 LM3302 LM339 CA0139E FN759 LM339N LM2901N CA239A CA0339E CA0339M CA0139AM CA0139M LM3302N
OCR Text ... -40 to 85 -40 to 85 PACKAGE 14 Ld PDIP 14 Ld SOIC 14 Ld PDIP 14 Ld SOIC 14 Ld PDIP 14 Ld SOIC 14 Ld PDIP 14 Ld PDIP 14 Ld SOIC 14 Ld PDIP P...MOS Clock Timers Schematic Diagram V+ 3 TO 2, 3, 4 3.5A 100A 3.5A 100A Pinout CA139A (SOIC) ...
Description Quad Voltage Comparators for Industrial, Commercial and Military Applications QUAD COMPARATOR, 4000 uV OFFSET-MAX, 1300 ns RESPONSE TIME, PDSO14
Quad Voltage Comparators for Industrial, Commercial and Military Applications QUAD COMPARATOR, 9000 uV OFFSET-MAX, 1300 ns RESPONSE TIME, PDSO14
DIODE ZENER SINGLE 150mW 12Vz 20mA-Izt 0.05 1uA-Ir 9.1 SOT-523 3K/REEL
Quad Voltage Comparators for Industrial/ Commercial and Military Applications
Quad Voltage Comparators for Industrial / Commercial and Military Applications
From old datasheet system

File Size 63.64K  /  6 Page

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    PHD12N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD12N10E
OCR Text ...ss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on d...MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.000 Philips Semic...
Description PowerMOS transistor

File Size 78.59K  /  7 Page

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    PHD44N06LT PHP44N06LT PHB44N06LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text ...tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate-source breakdown voltage Gate threshold voltage ...MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V...
Description TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 80.20K  /  10 Page

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    PHD5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD5N20E
OCR Text ...t) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature coe...MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". October 1997 6 Rev 1.100 Philips Semicon...
Description PowerMOS transistor

File Size 50.47K  /  7 Page

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    PHP5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP5N20E
OCR Text ...t) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature ...MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V...
Description PowerMOS transistor

File Size 47.45K  /  7 Page

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    TS3V556 TS3V556I

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TS3V556 TS3V556I
OCR Text ... D isc ha rge T h r e s h o ld 2 Co n t r o l Vo l t a g e 3 Th res ho ld Re se t 4 5 Co n t r o l Vo l t a g e Ou t p u t Re s e t Tr ig g e r 6 7 9 8 Out put Trigge r GND May 2000 1/8 TS3V5...
Description 3V LOW POWER DUAL TIMERS

File Size 62.58K  /  8 Page

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For ld-mos Found Datasheets File :: 931    Search Time::2.031ms    
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