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Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
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| Part No. |
ATA121302 ATA121302D1C
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| OCR Text |
...an on-chip bias voltage for PIN photodetectors. It is manufactured in a GaAs MESFET process and is available in bare die form.
4K
IIN
VOUT VOUT
AGC
US Patent: 5047728, 5602510
VN
Charge Pump
6.5 GHz Osc
US Patent Pend... |
| Description |
The ATA121302D1C is a 1.25 Gb/s Transimpedence amplifier possessing automatic gain control.
Datacom Optical Receivers
From old datasheet system
1.25Gb/s Transimpedance Amplifier
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| File Size |
200.89K /
8 Page |
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it Online |
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Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LNA2603F 0847 LN155 LNA2603FLN155
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| OCR Text |
...ght spectrum suited for silicon photodetectors : P = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package
3.90.25
4.50.15 3.50.15
2.10.15 1.60.15 0.80.1
12.8 min.
(2.95)
2-1.20.3 2-0.450.15
0.450.15
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| Description |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
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| File Size |
52.26K /
3 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH4590 SFH4595
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| OCR Text |
...5 q Spectral match with silicon photodetectors
Applications
q High data transmission rate up to 100 Mbaud
q q q q q
Ubertragungsraten bis zu 100 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Video... |
| Description |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
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| File Size |
57.69K /
6 Page |
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it Online |
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http://
VISAY[Vishay Siliconix]
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| Part No. |
TSHF5400
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| OCR Text |
...ty Good spectral matching to Si photodetectors
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5400 is ideal for th... |
| Description |
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
High Speed IR Emitting Diode in 庐5 mm (T-13/4) Package
High Speed IR Emitting Diode in ? 5 mm (T?1 4/5)Package
From old datasheet system
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
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| File Size |
83.35K /
6 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
LN175 0868
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| OCR Text |
...ght spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : = 120 deg. (typ.)
3.90.25
4.50.15 3.50.15
2.10.15 1.60.15 0.80.1
12.8 min.
... |
| Description |
Infrared Light Emitting Diodes
From old datasheet system
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| File Size |
54.44K /
3 Page |
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it Online |
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Price and Availability
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