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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
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OCR Text |
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Burst Length =1 tRC tRC(min), tcc tcc(min), Io = 0mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tcc = Input ... |
Description |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
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File Size |
115.81K /
12 Page |
View
it Online |
Download Datasheet
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Elite Semiconductor Memory Technology Inc.
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Part No. |
M52L64322A M52L64322A-6BG M52L64322A-7BG
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OCR Text |
...urst Length = 1 tRC tRC (min), tcc tcc (min), IOL= 0mA CKE VIL(max), tcc =15ns CKE VIL(max), CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc =10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc =... |
Description |
512K x 32 Bit x 4 Banks Synchronous DRAM
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File Size |
1,247.71K /
46 Page |
View
it Online |
Download Datasheet
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Price and Availability
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