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  tmos switching Datasheet PDF File

For tmos switching Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D
Description From old datasheet system
tmos POWER FET 3.0 AMPERES 1000 VOLTS
tmos E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 261.84K  /  10 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
Description tmos E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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    MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D
Description tmos E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system

File Size 270.78K  /  10 Page

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A tmos Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A tmos功率场效应管(N沟道增强型硅门))
tmos POWER FET 14 AMPERES
From old datasheet system
tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
tmos E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A tmos Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A tmos功率场效应管(N沟道增强型硅门))
From old datasheet system
tmos POWER FET 27 AMPERES
tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    MTD12N06EZL_D ON2462 MTD12N06EZL-D

ON Semiconductor
Part No. MTD12N06EZL_D ON2462 MTD12N06EZL-D
Description tmos E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos POWER FET 12 AMPERES 60 VOLTS

File Size 275.52K  /  10 Page

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    ONSEMI[ON Semiconductor]
Part No. AN1042 AN1042D
Description    High Fidelity switching Audio Amplifiers Using tmos Power MOSFETs

File Size 93.09K  /  12 Page

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    MGSF3455XT1 MGSF3455XT1-D MGSF3455XT3

Motorola, Inc.
ON Semiconductor
Part No. MGSF3455XT1 MGSF3455XT1-D MGSF3455XT3
Description Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor
P-CHANNEL ENHANCEMENT-MODE tmos MOSFET
Low Rds(on) Small-Signal MOSFETs tmos Single P-Channel Field Effect Transistors

File Size 86.32K  /  4 Page

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    BS170 BS170_D ON0218

Motorola, Inc.
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
Part No. BS170 BS170_D ON0218
Description Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24
tmos FET switching(N-Channel-Enhancement)
CASE 29-4, STYLE 30 TO-2 (TO-26AA)
From old datasheet system

File Size 76.23K  /  4 Page

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For tmos switching Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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