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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M30AVR
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| OCR Text |
...100% Avalanche Tested * Popular TO-3 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Paramete...204AE) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64... |
| Description |
POWER MOS V 100V 65A 0.030 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
66.38K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M90AVR
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| OCR Text |
...through optimized gate layout.
TO-3
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-3 Package
G
D
S
...204AE) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64... |
| Description |
POWER MOS V 300V 33A 0.090 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
64.32K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT4015AVR
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| OCR Text |
...through optimized gate layout.
TO-3
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-3 Package
G
D
S
...204AE) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64... |
| Description |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
63.92K /
4 Page |
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it Online |
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Motorola Inc
Motorola, Inc.
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| Part No. |
BUT34
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| OCR Text |
...Operating Temperature Range -65 to 200_C
Designer's and SWITCHMODE are trademarks of Motorola, Inc. (1) Pulse Test: Pulse Width = 5 ms, Dut...204AE (TO-3)
Order this document by BUT34/D
Watts
W/_C
_C/W
Unit
Unit
Adc
Ad... |
| Description |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
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| File Size |
287.21K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FRK260D FRK260H FRK260R FN3228
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| OCR Text |
to-204ae
Features
* 46A, 200V, RDS(on) = 0.070 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance ... |
| Description |
46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, to-204ae
From old datasheet system
46A/ 200V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs
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| File Size |
47.13K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRK264D FRK264H FRK264R FN3233
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| OCR Text |
to-204ae
Features
* 34A, 250V, RDS(on) = 0.120 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance ... |
| Description |
34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
34A/ 250V/ 0.120 Ohm/ Rad Hard/ N-Channel Power MOSFETs
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| File Size |
60.49K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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