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For to262 Found Datasheets File :: 325 Search Time::0.969ms
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				Infineon Technologies AG
Part No.	IPB16CN10NG IPD16CN10NG IPI16CN10NG IPP16CN10N IPP16CN10NG
OCR Text	...10N PG-TO252-3 16CN10N PG-to262-3 16CN10N PG-TO220-3 16CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ...
Description	OptiMOS?2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) OptiMOS㈢2 Power-Transistor
File Size	621.46K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB16CNE8NG IPD16CNE8NG IPI16CNE8NG IPP16CNE8N IPP16CNE8NG
OCR Text	...E8N PG-TO252-3 16CNE8N PG-to262-3 16CNE8N PG-TO220-3 16CNE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ...
Description	OptiMOS?2 Power-Transistor OptiMOS㈢2 Power-Transistor
File Size	554.92K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPB50CN10NG IPI50CN10NG IPP50CN10N IPP50CN10NG IPU49CN10NG IPD49CN10NG
OCR Text	...10N PG-TO252-3 49CN10N PG-to262-3 50CN10N PG-TO220-3 50CN10N PG-TO251-3 49CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain ...
Description	OptiMOS?2 Power-Transistor OptiMOS㈢2 Power-Transistor
File Size	707.51K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB26CN10N10 IPD25CN10NG
OCR Text	...10N PG-TO252-3 25CN10N PG-to262-3 26CN10N PG-TO220-3 26CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current 2) Value 3...
Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
File Size	540.51K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPB80CN10NG IPD78CN10NG IPI80CN10NG IPP80CN10N IPP80CN10NG IPU78CN10NG
OCR Text	...10N PG-TO252-3 78CN10N PG-to262-3 80CN10N PG-TO220-3 80CN10N PG-TO251-3 78CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain ...
Description	OptiMOS?2 Power-Transistor OptiMOS㈢2 Power-Transistor
File Size	707.20K / 13 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	IPP06N03LA
OCR Text	...product summary pg-to220-3-1 pg-to262-3-1 type package marking ipi06n03la pg-to262-3-1 06n03la ipp06n03la pg-to200-3-1 06n03la rev. 1.91 page 1 2008-04-29 ipi06n03la, ipp06n03la parameter symbol conditions unit min. typ. max. thermal char...
Description	50 A, 25 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	289.89K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPD12CN10NG
OCR Text	...ackage pg-to263-3 pg-to252-3 pg-to262-3 pg-to220-3 marking 12cn10n 12cn10n 12cn10n 12cn10n rev. 1.02 page 1 2006-06-02 ipb12cn10n g ipd12cn10n g ipi12cn10n g ipp12cn10n g parameter symbol conditions unit min. typ. max. thermal char...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体
File Size	616.62K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG
OCR Text	...10N PG-TO252-3 12CN10N PG-to262-3 12CN10N PG-TO220-3 12CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche en...
Description	OptiMOS鈩? Power-Transistor Features N-channel, normal level Very low on-resistance R DS
File Size	503.58K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB08CN10NG10 IPI08CN10NG
OCR Text	...ing PG-TO263-3 08CN10N PG-to262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche en...
Description	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
File Size	406.74K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG
OCR Text	...ing PG-TO263-3 06CN10N PG-to262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche ...
Description	OptiMOS鈩? Power-Transistor
File Size	432.34K / 11 Page	View it Online	Download Datasheet

For to262 Found Datasheets File :: 325 Search Time::0.969ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |