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    U4055B U4055B1

TEMIC Semiconductors
Part No. U4055B U4055B1
OCR Text ...at 1.5 V (MUTE) or at less than 0.5 V (MUTE) to mute the MIC Amp. and Audio Amp. and enable DTMF IN. Pin 11 Symbol V+ Function Regulated output voltage of 2.7 V for biasing a DTMF generator activated by MUTE. The receive amplifier input. Th...
Description Low-Voltage Electronic Speech Circuit with Dialer Interface

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    Advanced Semiconductor, Inc.
Part No. TVU05
OCR Text ... 7.24 MINIMUM inches / mm 2.0 A 45 V 25 V 3.5 V 31.8 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 22 OC/W O O O #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3....
Description 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR

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    TV2208FM TV2216FM TV22 TV2206FK TV2206FM TV2208FK TV2210FK TV2210FM TV2212FK TV2212FM TV2214FK TV2214FM TV2216FK

DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. TV2208FM TV2216FM TV22 TV2206FK TV2206FM TV2208FK TV2210FK TV2210FM TV2212FK TV2212FM TV2214FK TV2214FM TV2216FK
OCR Text 0 January 2000 APPLICATIONS s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 1600V IF(AV) 305A IFSM 5000A Qr 70C trr 3.2s FEATURES s Thermal Fatigue Free P...
Description    Fast Recovery Diode

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    TQM7M5004

TriQuint Semiconductor
Part No. TQM7M5004
OCR Text ...) * Positive supply voltage - 3.0 to 4.5 V * 50 input and output impedances. * GPRS class 12. * CMOS band select and internal closed-loop power control for GSM Operation. * High-reliability InGaP technology. * Ruggedness 10:1 * No external...
Description    GSM/EDGE Multi-mode Power Amplifier Module

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    TQM7M5003

TriQuint Semiconductor
Part No. TQM7M5003
OCR Text ... Band Typ Max 35 51 3 29 23 -58 0 3 6 0 3 20 6 Min 50 0 900 Band Typ Max 35 56 3 29 24 -58 6 0 3 22 6 DCS Band Min 32 42 0 Typ 33 50 3 28 25 -58 6 0 3 26 6 Max Min 32 45 0 PCS Band Typ Max 33 53 3 28 29 -58 6 6 GSM Pout 34.5 Efficiency 4...
Description Quad-Band GSM/EDGE Polar Power Amplifier Module

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    TQM7M5002

TriQuint Semiconductor
Part No. TQM7M5002
OCR Text ...0 Band Typ 35 51 3 29 19 23 -58 0 3 6 0 3 20 6 Max Min 34.5 50 0 900 Band Typ 35 56 3 29 24 -58 6 0 3 22 6 Max 32 42 0 DCS Band Min Typ 33 50 3 28 25 -58 6 0 3 26 6 Max Min 32 45 0 PCS Band Typ 33 53 3 28 29 -58 6 6 Max Min GSM Pout 34.5 Ef...
Description Quad-Band GSM/EDGE Polar Power Amplifier Module

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    TPCA8103

Toshiba Semiconductor
Part No. TPCA8103
OCR Text 0.50.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.00.3 Unit: mm 1.27 8 0.40.1 5 0.05 M A * * * * * Small footprint due to small and thin package Low drain-source ON resistance: ...
Description MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)

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    SML100H9

SemeLAB
Seme LAB
Part No. SML100H9
OCR Text 0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 123 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) N-CHANNEL ENHANCEMENT MODE HIG...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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    TMPR3922AU

Toshiba Semiconductor
Part No. TMPR3922AU
OCR Text ... 3.3 MEMORY CONNECTIONS D [31:0] Data Bus and CAS* signals change the name of the pins in the Little Endian mode as follows. D [31:24] becomes D[7:0] D [23:16] D [15:8] D [7:0] CAS3* CAS2* CAS1* CAS0* becomes becomes becomes becomes becom...
Description 32-bit RISC Microprocessor

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