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  0.50-4.50v Datasheet PDF File

For 0.50-4.50v Found Datasheets File :: 29004    Search Time::2.891ms    
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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...nt)** Typ. --- --- Max. 0.65 40 Units C/W www.irf.com 1 02/14/02 IRF2807S/IRF2807L Electrical Characteristics @ TJ = ...50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Max...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 3/16/01 IRF2807 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS ...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capac...50 Units C/W Notes through are on page 8 www.irf.com 1 4/2/02 IRF3000 Static @ T...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ca...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... VDSS = 150V G S RDS(on) = 0.07 ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide accept...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...d D VDSS = 150V RDS(on) = 0.042 G ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...50 VDS VGS RD 40 D.U.T. + RG I D , Drain Current (A) -V DD 30 10V Pulse...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ... VDSS = 150V G S RDS(on) = 0.042 ID = 43A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide accep...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...l VDSS 150V RDS(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanc...50 VDS VGS RD 40 D.U.T. + RG I D , Drain Current (A) -VDD 30 10V Pulse ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...d D VDSS = 100V RDS(on) = 0.025 G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing...50 V V D S = 20 V 16 12 C oss 2000 8 C rss 1000 4 0 1 10 100 A 0 0 40 8...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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