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hitachi
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| Part No. |
HAT2039R
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| OCR Text |
...nit V V A A A W W C C
1. PW 10s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electric... |
| Description |
GaAlAs Infrared Emitting Diode
From old datasheet system
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| File Size |
106.52K /
9 Page |
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it Online |
Download Datasheet
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hitachi
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| Part No. |
HAT1038RJ
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| OCR Text |
...1.05 2 3 150 -55 to +150
PW 10s, duty cycle 1 % 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Value at Tch=25C,... |
| Description |
Silicon N Channel Power MOS FET
High Speed Power Switching
From old datasheet system
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| File Size |
122.47K /
10 Page |
View
it Online |
Download Datasheet |
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hitachi
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| Part No. |
HAT1030T
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| OCR Text |
... A A A W W C C
Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical... |
| Description |
Silicon P Channel Power MOS FET
High Speed Power Switching
From old datasheet system
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| File Size |
26.18K /
5 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IGP06N60T
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| OCR Text |
....6 mm (0.063 in.) from case for 10s
2)
Symbol VCE IC
Value 600 12 6 18 18 20 5 88 -40...+175 -55...+175 260
Unit V A
ICpul s VGE tSC Ptot Tj Tstg
V s W C
VGE = 15V, VCC 400V, Tj 150C
1 2)
J-STD-020 and JESD-022 Al... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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| File Size |
327.84K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
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| OCR Text |
...T Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Maximum Junction Temperature Rated at 175C
G E C
VCES = 600... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
275.00K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGIB6B60KD
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| OCR Text |
...T Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient.
G E C
VCES = 600V IC = 6.0A, TC=90C tsc > 10s, TJ=175C
n-c... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
270.40K /
12 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGIB7B60KD
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| OCR Text |
... Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175C.
IRGIB7B60KD
C
VCES = 600V IC = 8.0A, TC=100C
G E
tsc > 10s, TJ=1... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
432.54K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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