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Advanced Power Electron...
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Part No. |
AP4525GEM-HF-16
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OCR Text |
...transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 6 9 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.1a, v gs =0v - - -1.8 v t rr reverse recovery time i s =... |
Description |
Fast Switching Performance
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File Size |
85.44K /
8 Page |
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CREE POWER
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Part No. |
CRF-22010-001 CRF-22010-101
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OCR Text |
...6.226 0.893 / -106.865 0.882 / -115.585 0.874 / -122.815 0.868 / -128.889 0.864 / -134.057 0.860 / -138.512 0.858 / -142.398 0.856 / -145.826 0.854 / -148.880 0.853 / -151.628 0.852 / -154.123 0.852 / -156.406 0.852 / -158.512 0.852 / -160.... |
Description |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
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File Size |
140.33K /
8 Page |
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International Rectifier
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Part No. |
IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF-15
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OCR Text |
...re, for 10 seconds
Max.
162 115 650 3.8 200 1.3 20 519 95 20 5.0 -55 to +175 -55 to +175 300 (1.6mm from case )
Units
A W W W/C V m...0MHz, See Fig. 5 6630 --- VGS = 0V, VDS = 1.0V, = 1.0MHz 1490 --- VGS = 0V, VDS = 32V, = 1.0MHz 1... |
Description |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology
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File Size |
270.84K /
11 Page |
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Digitron Semiconductors
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Part No. |
3N209 3N210
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OCR Text |
....165 3.940 4.190 c 0.105 0.115 2.670 2.920 d 0.025 0.035 0.640 0.890 f 0.008 0.012 0.200 0.300 g 0.106 bsc 4.060 bsc h 0.062 0.072 1.570 1.830 j 0.020 0.030 0.510 0.760 k 0.250 0.300 6.350 7.620 r 0.205 ... |
Description |
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
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File Size |
779.87K /
5 Page |
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it Online |
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Price and Availability
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