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IBM Microeletronics
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| Part No. |
IBM0165805B IBM0165805P
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| OCR Text |
12/11 edo dram 88h2009 ga14-4254-02 revised 11/97 ?ibm corporation. all rights reserved. use is further subject to the provisions at the en...98 - last order; 3/99 last ship)
ibm0165805b ibm0165805p 8m x 8... |
| Description |
8M x 8 12/11 EDO DRAM(8M x 8 动态RAM（超页面模式并带23条地址线，其中12条为行地址选通，11条为列地址选通）)
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| File Size |
368.17K /
29 Page |
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Micron Technology, Inc.
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| Part No. |
MT55L64L32P1 MT55L128L18P
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| OCR Text |
...9 dqb dqc dqc 10 v ss 11 v dd q 12 dqb dqc dqc 13 dqb dqc dqc 14 v dd 15 v dd 16 v dd 17 v ss 18 dqb dqd dqd 19 dqb dqd dqd 20 v dd q 21 v s...98 99 100 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 80 79 78 77 76 75 74 73 72 71 ... |
| Description |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
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| File Size |
396.14K /
23 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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| OCR Text |
...9 dqb dqc dqc 10 v ss 11 v dd q 12 dqb dqc dqc 13 dqb dqc dqc 14 v dd 15 v dd 16 v dd 17 v ss 18 dqb dqd dqd 19 dqb dqd dqd 20 v dd q 21 v s...98 ce# 99 sa 100 sa
5 4mb: 256k x 18, 128k x 32/36 pipelined zbt sram micron technology, inc., res... |
| Description |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
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| File Size |
426.03K /
25 Page |
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it Online |
Download Datasheet |
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Price and Availability
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