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  125.000001 Datasheet PDF File

For 125.000001 Found Datasheets File :: 1021    Search Time::2.329ms    
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    NRVB2H100SFT3G MBR2H100SFT3G-12 MBR2H100SF

ON Semiconductor
Part No. NRVB2H100SFT3G MBR2H100SFT3G-12 MBR2H100SF
OCR Text ... = 25 c) (i f = 1.0 a, t j = 125 c) (i f = 2.0 a, t j = 125 c) v f 0.76 0.84 0.61 0.68 v maximum instantaneous reverse current (note ...000001 50% (duty cycle) 25% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1.0 0.1 0.00001 pulse ti...
Description Schottky Power Rectifier, Surface Mount, 2.0 A, 100 V, SOD-123FL Package
Surface Mount Schottky Power Rectifier

File Size 118.99K  /  5 Page

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    MURS360BT311

ON Semiconductor
Part No. MURS360BT311
OCR Text ...d ? epoxy meets ul 94 v ? o @ 0.125 in ? weight: 95 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal lead...000001 0.00001 0.0001 0.001 0.01 0.1 600 500 400 300 200 100 0 i f , instantaneous forward current (...
Description Surface Mount Ultrafast Power Rectifiers

File Size 93.47K  /  5 Page

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    2V7002KT1G 2N7002KT1G

ON Semiconductor
Part No. 2V7002KT1G 2N7002KT1G
OCR Text ... 60 v t j = 25 c 1 a t j = 125 c 500 v gs = 0 v, v ds = 50 v t j = 25 c 100 na gate ? to ? source leakage current i gss v ds = 0 ...000001 0.00001 0.0001 0.001 0.01 0.1 1000 figure 11. thermal response ? 1 sq in pad t, pulse time ...
Description Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23

File Size 107.13K  /  6 Page

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    NGTB25N120LWG

ON Semiconductor
Part No. NGTB25N120LWG
OCR Text ...f 0.8 turn-on delay time t j = 125 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15 v t d(on) 88 ns rise time t r 29 turn-off del...000001 0.001 0.1 1 10 thermal response (z jc ) 1 0.00001 50% duty cycle 20% 10% 5% 2% 1% single pu...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.
   IGBT

File Size 173.05K  /  9 Page

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    MURHD560W1T4G

ON SEMICONDUCTOR
Part No. MURHD560W1T4G
OCR Text ...d ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 0.4 g (approximately) ? finish: all external surfaces corrosion resistant and terminal lead...000001 t, time (s) 10 1 0.1 0.0001 0.001 0.01 1.0 10 0.01 single pulse 0.5 0.2 0.1 0.05 0.01 0.00001...
Description 5 A, 600 V MEGAHERTZ&#8482 Ultrafast Rectifier

File Size 111.54K  /  5 Page

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    NGTB25N120IHLWG

ON Semiconductor
Part No. NGTB25N120IHLWG
OCR Text ...mj turn ? off delay time t j = 125 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(off) 250 ns fall time t f 225 turn ? off...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 18. igbt transient thermal impedance pulse...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.

File Size 169.31K  /  9 Page

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    NGTB25N120FLWG

ON Semiconductor
Part No. NGTB25N120FLWG
OCR Text ....45 turn ? on delay time t j = 125 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(on) 88 ns rise time t r 28 turn ? off de...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r ...
Description IGBT

File Size 182.20K  /  10 Page

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    MBRF2045CT MBRF2045CTG MBR2045CT

ON Semiconductor
Part No. MBRF2045CT MBRF2045CTG MBR2045CT
OCR Text ... ? epoxy meets ul 94, v ? 0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal ...000001 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 10 r(t), trans...
Description SWITCHMODE Power Rectifier

File Size 139.90K  /  8 Page

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    MBR30H100CT

ON Semiconductor
Part No. MBR30H100CT
OCR Text ...? low forward voltage: 0.67 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 30 a...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A(100V,30A开关模式功率整流器) 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 65.36K  /  6 Page

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    MBR30H100CTG

ON Semiconductor
Part No. MBR30H100CTG
OCR Text ...? low forward voltage: 0.67 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 30 a...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 67.78K  /  6 Page

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