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IXYS[IXYS Corporation]
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Part No. |
VUI30-12N1
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OCR Text |
...Values min. typ. max. 2.2 1.9 2 16 400 2.6 2.4 0.75 V V mA mA A ns 1.3 K/W K/W
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 5 35 mm g
dA, dS Weight Dimensions in mm (1 mm = 0.0394")
(c) 2001 IXYS All... |
Description |
3-Phase PFC Modules Rectifier Module for Three Phase Power Factor Correction From old datasheet system
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File Size |
52.64K /
2 Page |
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IXYS[IXYS Corporation]
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Part No. |
IXRH50N80 IXRH50N60
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OCR Text |
...2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225... |
Description |
IGBT with Reverse Blocking capability
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File Size |
42.84K /
2 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGB15N60HS Q67040-S4535
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OCR Text |
...re E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
7
Rev 2.1
Jan 05
SGB15N60HS
^
15V
VGE, GATE-EMITTER VOLTAGE
1nF
Ciss
10V
120V
480V
c, CAPACITANC... |
Description |
High Speed IGBT in npt-technology
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File Size |
321.77K /
11 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGW02N120
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OCR Text |
... and diode reverse recovery. 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time... |
Description |
Fast IGBT in npt-technology
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File Size |
307.92K /
11 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGW50N60HS
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OCR Text |
...2) reverse recovery . 47 32 310 16 1.08 0.88 1.96 mJ ns Symbol Conditions Value min. typ. max. Unit
1 2
Leakage inductance L a n d Stray capacity C due to test circuit in Figure E. Diode used in this test is IDP45E60 3 Rev. 2.1 June... |
Description |
High Speed IGBT in npt-technology
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File Size |
327.64K /
11 Page |
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it Online |
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Price and Availability
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