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NIC Components, Corp.
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| Part No. |
NAE-WT101M16V8X16 NAE-WT101M35V8X16 NAE-WT103M16V18X50 NAE-WT101M50V8X20 NAE-WT102M100V18X50
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| OCR Text |
... 1851 4,700 1031 1176 1418 1594 1877 1991 6,800 1251 1485 1682 1876 2043 10,000 1534 1710 1912 1970 ambient temperature ( o c) < 60 +70 +85 ...5-10 12.5 16-18 22 lead dia. (d ? ) 0.6 0.8 0.8 0.8 dim. a 0.5 0.5 0.5 1.0 dim. b 1.0 1.0 2.0 2.0
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| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 100 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 100 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10000 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 100 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 100 V, 1000 uF, THROUGH HOLE MOUNT AXIAL LEADED
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| File Size |
79.58K /
3 Page |
 View
it Online |
Download Datasheet
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P18190HR6
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| OCR Text |
...5 mhz and f1 = 1867.5 mhz, f2 = 1877.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01%... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
459.02K /
12 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18140HR3
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| OCR Text |
...5 mhz, f2 = 1807.5 mhz and f1 = 1877.5 mhz, f2 = 1880 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz channel bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
407.60K /
12 Page |
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it Online |
Download Datasheet |
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