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  2.5-ghz Datasheet PDF File

For 2.5-ghz Found Datasheets File :: 23317    Search Time::1.61ms    
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    BFS17AR BFS17AW BFS17A

Vishay Siliconix
Vishay Telefunken
Part No. BFS17AR BFS17AW BFS17A
OCR Text ...bsolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base vol...GHz GHz GHz pF pF pF dB dB mV 23.5 dBm Document Number 85039 Rev. 4, 20-Jan-99 BFS17A/BF...
Description From old datasheet system
Silicon NPN Planar RF Transistor

File Size 163.18K  /  10 Page

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    BFS17A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17A
OCR Text ...ge up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; f = 800...GHz dB dB mV UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134)...
Description NPN 3 GHz wideband transistor

File Size 43.58K  /  6 Page

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    BFS17H BFS17L

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. BFS17H BFS17L
OCR Text ...O I CM IC P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAME...GHz GHz pF 1.5 2.0 4.5 -45 pF pF dB dB I C=2.0mA, V CE=1.0V I C=2.0mA, V CE=1.0V I C=25mA, V CE=1.0V...
Description NPN RF Transistor
SOT23 NPN SILICON PLANAR RF TRANSISTORS

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    TriQuint Semiconductor,Inc.
Part No. TGF4260-SCC
OCR Text ...c probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit note i dss saturated drain current -- 2352 -...ghz, vd = 8.5 v, iq = 795 ma 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 16 18 20 22 24 26 28 30 inpu...
Description 9.6 mm Discrete HFET

File Size 425.97K  /  9 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA8399B-SCC
OCR Text ...e. table ii dc probe test (ta = 25 c 5 c) notes symbol limits units min max i dss1 information only ma i max 169 290 ms gm1 99 239 ms...ghz 23 26 db power output @ 1 db gain compression f = 6 - 13 ghz 11 dbm 2/ noise figure f = 6 - 13 g...
Description 6-13 GHz Low Noise Amplifier

File Size 211.85K  /  8 Page

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    BFS17R BFS17W BFS17

Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Vishay Siliconix
Part No. BFS17R BFS17W BFS17
OCR Text ...bsolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base vol...GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document Number 85038 Rev. 4, 20-Jan-99 www.vish...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 148.66K  /  10 Page

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    BFS17S Q62702-F1645

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17S Q62702-F1645
OCR Text ...lector current Symbol Values 15 25 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f 10 MHz Total power dissipation mW 280 150 - 6...GHz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacita...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  5 Page

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    BFS17W

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFS17W
OCR Text ...TIONS - - - - - -65 - MIN. MAX. 25 15 2.5 50 300 +150 175 UNIT V V V mA mW C C PARAMETER collector-base voltage collector-emitter voltage DC...GHz pF pF C UNIT V V mA mW 1995 Sep 04 2 Philips Semiconductors Product specification ...
Description NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体
NPN 1 GHz wideband transistor

File Size 46.15K  /  6 Page

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    BFS17

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17
OCR Text ...re up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 C open emitter...GHz dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC...
Description NPN 1 GHz wideband transistor

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    LLE16045X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE16045X
OCR Text ...crowave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.04 PL1 (W) 4.5 Gpo (dB) 8.5 C (%) typ. 50 Zi; ZL () see Figs 8 and 9 PINNING - SOT437A PIN 1 2...
Description NPN microwave power transistor

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