200a 1200 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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200a 1200 Datasheet PDF File

For 200a 1200 Found Datasheets File :: 2150 Search Time::0.828ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU
OCR Text	...ng TJ = 25C 3. ISD 12A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...1200 Crss 600 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 12 A 0 -1 10 0...
Description	600V N-Channel QFET 600V N-Channel MOSFET
File Size	538.95K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP12N60
OCR Text	...ng TJ = 25C 3. ISD 12A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...1200 Crss 600 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 12 A 0 -1 10 0...
Description	600V N-Channel MOSFET
File Size	530.72K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF12N60 FQPF12N60T
OCR Text	...ng TJ = 25C 3. ISD 12A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...1200 Crss 600 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 12 A 0 -1 10 0...
Description	600V N-Channel MOSFET 600V N-Channel QFET
File Size	547.79K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH50UD IRG4PH50
OCR Text	...nC TJ = 25C See Fig. 16 di/dt = 200a/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UD 30 25 F o...1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V T J = 125C T J = 25C 900 ...
Description	1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
File Size	226.41K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...e Fig. 880 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
Part No.	XN1C301 XN0C301
OCR Text	...r current IC (mA) -250A -40 -200a -30 -40 Base current IB (A) -300 -250 -200 -150 -100 -50 -150A -30 -20 -100A -2...1200 VCE=10V Ta=25C IB -- VBE 240 IC -- VBE VCE=10V 200 Collector current IC (mA) Base...
Description	Composite Device - Composite Transistors Silicon PNP epitaxial planer transistor (Tr1)
File Size	74.34K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD1272
OCR Text	...=25C IB=400A 350A 300A 0.3 250A 200a 0.2 150A 100A 0.1 50A 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 2SD1272 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=25 Collector power dissip...
Description	Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
File Size	43.61K / 2 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	6MBI100S-120
OCR Text	...A ] 150 6 100 4 Ic= 200a 2 Ic= 100A Ic= 50A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Ga...1200 1400 Collector - Emitter voltage : VCE [ V ] 6MBI100S-120 IGBT Modules Forward current...
Description	IGBT MODULE(S series)
File Size	510.50K / 4 Page	View it Online	Download Datasheet

				IRF International Rectifier
Part No.	IRGPC50FD2
OCR Text	... Fig. 1200 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
File Size	395.73K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-24BK QM150
OCR Text	...CAL) ton, ts, tf (s) 4 IC=200a 3 IC=150A 2 IC=100A SWITCHING TIME 10 1 7 5 4 3 2 ts 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 ...1200 1400 tf VCC=600V IC=150A IB1=300mA Tj=25C Tj=125C 3 4 5 7 10 1 2 3 4 5 7 10 2 23 BASE ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	82.55K / 5 Page	View it Online	Download Datasheet

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