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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
SMCJ26
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| OCR Text |
...device weight : 0.007 ounces, 0.21 gram t j operating temperature range -55 to +150 t stg storage temperature range -55 to +175 c i fsm pe...77.4 19.4 5.0 smcj51 smcj51c gfy bfy 51 56.7 71.8 1.0 91.1 16.5 5.0 smcj51a smcj51ca gfz bfz 51 56.7... |
| Description |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
50.40K /
4 Page |
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RECTRON LTD
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| Part No. |
SMCJ26
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| OCR Text |
...9.51 7.78 8.60 8.33 10.2 8.33 9.21 8.89 10.9 8.89 9.83 9.44 11.5 9.44 10.4 10.0 12.2 10.0 11.1 11.1 13.6 11.1 12.3 12.2 14.9 12.2 13.5 13.3 ...77.8 95.1 77.8 86.0 83.3 102 83.3 92.1 86.7 106 86.7 95.8 94.4 115 94.4 104 100 122 100 111 111 136 ... |
| Description |
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
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| File Size |
35.59K /
5 Page |
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it Online |
Download Datasheet |
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Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
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| Part No. |
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 STBS014 STBS015 STBS016 STBS018 STBS019 STBS020 STBS021 STBS023 STBS026 STBS028 STBS030 STBS033 STBS035 STBS039 STBS042 STBS047 STBS050 STBS053 STBS060 STBS063 STBS068 STBS06H STBS071 STBS075 STBS07A STBS07G STBS082 STBS088 STBS08C STBS08I STBS091 STBS099 STBS09B STBS0B1 STBS0B2 STBS0B3 STBS0B4 STBS0B5 STBS0B8 STBS0B9 STBS0D0 STBS510 STBS511 STBS512 STBS513 STBS514 STBS515 STBS516 STBS518 STBS519 STBS520 STBS521 STBS523 STBS526 STBS528 STBS530 STBS533 STBS535 STBS539 STBS542 STBS547 STBS550 STBS553 STBS556 STBS560 STBS563 STBS568 STBS56H STBS571 STBS575 STBS57A STBS57G STBS582 STBS588 STBS58C STBS58I STBS591 STBS599 STBS59B STBS5B1 STBS5B2 STBS5B3 STBS5B4 STBS5B5 STBS5B8 STBS5B9
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| OCR Text |
...5 26.6 29.4 24.9 27.4 22.7 25.1 21.0 23.2 19.4 21.5 18.8 20.6 17.6 19.2 16.4 18.1 15.5 17.2 13.9 15.4 12.7 14.1 11.6 12.8 10.7 11.9 9.9 11.0...77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 1... |
| Description |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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| File Size |
47.58K /
4 Page |
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Download Datasheet |
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POWEREX INC
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| Part No. |
CM450DY-24S
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| OCR Text |
...1 18.0 q 0.28 7.0 r 0.83 21.2 s 0.33 8.5 t 0.0157 0.4 u 0.110 2.8 v 0.16 4.0 w 0.30 7.5 x 0.21 5.3 y 0.47 12.0 ...77.4 33.6 46.6 di1 di1 di1 tr2 tr2 tr2 tr1 tr1 tr1 di2 di2 di2 66.2 21.5 21.6 35.0 48.2 48.4 45.6 33... |
| Description |
410 A, 1200 V, N-CHANNEL IGBT
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| File Size |
596.43K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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