|
|
 |
International Rectifier, Corp. IRF[International Rectifier]
|
Part No. |
IRL3102S
|
OCR Text |
...ID = 1mA 0.015 VGS = 4.5V, ID = 37A W 0.013 VGS = 7.0V, ID = 37A --- V VDS = VGS, ID = 250A --- S VDS = 16V, ID = 35A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, VGS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 58 ID = 35A 14 nC VDS = 16V... |
Description |
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)\u003d0.013瓦特,身份证\u003d 61A条) Power MOSFET(Vdss=20V Rds(on)=0.013w Id=61A)
|
File Size |
86.82K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SAMHOP[SamHop Microelectronics Corp.]
|
Part No. |
SDB75N03L SDP75N03L
|
OCR Text |
...VGS, ID = 250uA VGS = 10V, ID = 37A VGS = 4.5V, ID = 30A VGS = 10V, VDS = 10V VDS = 10V, ID = 37A
Min Typ Max Unit
30 35 10
100
V uA nA V
m ohm
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance... |
Description |
N-Channel Logic Level E nhancement Mode Field Effect Transistor
|
File Size |
441.29K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ADPOW[Advanced Power Technology]
|
Part No. |
APTM50H10FT3
|
OCR Text |
37A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
Features * Power MOS 7(R) FREDFETs - Low RDSon ... |
Description |
Full - Bridge MOSFET Power Module
|
File Size |
318.14K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |

INTERSIL[Intersil Corporation] Intersil, Corp.
|
Part No. |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
|
OCR Text |
... = 30V VGS = 12V, ID = 58A ID = 37A, VGS = 12V TC = 25oC TC = 125oC TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 200 2.0 1.0 VGS = 0V to 12V VDD = 100V, ID = 58A VGS = 0V to 20V VGS = 0V to 2V ID = 58A, VDS ... |
Description |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
File Size |
82.56K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|