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  304.8m Datasheet PDF File

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    Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 15GN01M
OCR Text ...0.341 0.328 0.316 0.311 0.306 0.304 0.306 S11 --41.07 --60.49 --76.83 --90.31 -102.08 -112.57 -122.49 -130.50 -137.80 -144.30 S21 8.945 5.500 4.039 3.197 2.654 2.264 1.988 1.771 1.605 1.470 S21 114.82 103.75 95.20 88.11 81.71 76.38 70.80 65...
Description VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications 甚高频到超高频波段高频开关,内镜下高频通用放大器应
Pico-GET Series

File Size 25.11K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. CPH3004
OCR Text ...0.603 0.446 0.356 0.327 0.314 0.304 0.297 0.289 0.282 0.274 0.276 0.265 0.254 0.256 0.254 0.248 S11 --69.87 --108.16 --147.41 --168.35 176.49 164.15 153.76 142.98 132.57 123.62 115.05 105.07 97.62 90.82 83.73 76.43 S21 17.497 11.137 6.097 4...
Description Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications

File Size 38.38K  /  7 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H280838F-TC_LB3 K4H280438F K4H280438F-TC_LA0 K4H280438F-TC_LA2 K4H280438F-TC_LB0 K4H280838F-TC_LA2 K4H280838F-TC_LB0
OCR Text ...ized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on...
Description 128Mb F-die DDR SDRAM Specification

File Size 203.97K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H280438F-UCA2 K4H280438F-UCB0 K4H280438F-ULA0 K4H280438F-ULA2 K4H280438F-ULB0 K4H280838F-UCA2 K4H280838F-UCB0 K4H280838F-UCB3 K4H280838F-ULA2 K4H280838F-ULB0
OCR Text ...ized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on...
Description 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

File Size 295.20K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7I643682M-FC30 K7I641882M K7I641882M-EI16 K7I641882M-EI20 K7I641882M-EI25 K7I641882M-EI30 K7I641882M-FC16 K7I641882M-FC20 K7I641882M-FC25 K7I641882M-FC30 K7I643682M K7I643682M-EI16 K7I643682M-EI20 K7I643682M-EI25 K7I643682M-EI30 K7I643682M-FC16 K7I643682M-FC20 K7I643682M-FC25
OCR Text ...36bits for K7I643682M and 4,194,304 words by 18 bits for K7I641882M. Address, data inputs, and all control signals are synchronized to the input clock ( K or K ). Normally data outputs are synchronized to output clocks ( C and C ), but when...
Description 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)

File Size 301.37K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I641884M-CE30 K7I641884M-CI25 K7I641884M-CI30 K7I641884M-FC16 K7I641884M-FC20 K7I641884M-FCI16 K7I641884M-FCI20 K7I641884M-FE25 K7I641884M-FE30 K7I641884M-FECI25 K7I641884M-FECI30 K7I641884M-FI16 K7I641884M-FI20 K7I641884M-FI25 K7I641884M-FI30 K7I643684M K7I643684M-EC25 K7I643684M-EC30 K7I643684M-EI25 K7I643684M-EI30 K7I643684M-FC16 K7I643684M-FC20 K7I643684M-FC25 K7I643684M-FC30 K7I643684M-FCI16 K7I643684M-FCI20 K7I643684M-FECI25 K7I643684M-FECI30 K7I643684M-FI16 K7I643684M-FI20 K7I643684M-FI25
OCR Text ...36bits for K7I643684M and 4,194,304 words by 18 bits for K7I641884M. Address, data inputs, and all control signals are synchronized to the input clock (K or K). Normally data outputs are synchronized to output clocks (C and C), but when C a...
Description 72Mb DDRII SRAM Specification

File Size 409.12K  /  18 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J641882M-FECI16 K7J641882M-FECI20 K7J641882M-FECI25 K7J641882M-FECI30 K7J643682M K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J643682M-FC30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25
OCR Text ...36bits for K7J643682M and 4,194,304 words by 18 bits for K7J641882M. The DDR SIO operation is possible by supporting DDR read and write operations through separate data output and input ports. Memory bandwidth is higher than DDR sram withou...
Description 72Mb M-die DDRII SRAM Specification

File Size 312.35K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KAB04D100M-TNGP KAB01D100M KAB01D100M-TLGP KAB01D100M-TNGP KAB02D100M-TLGP KAB02D100M-TNGP KAB03D100M-TLGP KAB03D100M-TNGP KAB04D100M-TLGP
OCR Text ...ash : 8,388,608 x 8 bit / 4,194,304 x 16 bit - NAND Flash : (8M + 256K)bit x 16bit - UtRAM : 2Mbit x 16 bit * Access Time - NOR Flash : 70ns(Max.) - NAND Flash : Random : 10us(Max.), Serial : 50ns(Min.) - UtRAM : 85ns * Power Consumption (t...
Description Multi-Chip Package MEMORY

File Size 1,371.88K  /  72 Page

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    SHARP[Sharp Electrionic Components]
Part No. LH28F400SU-LC
OCR Text ...is a high performance 4M (4,194,304 bit) block erasable non-volatile random access memory organized as either 256K x 16 or 512K x 8. The LH28F400SU-LC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The impl...
Description 4M (512K 】 8, 256K 】 16) Flash Memory

File Size 296.28K  /  37 Page

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    SHARP[Sharp Electrionic Components]
Part No. LH28F400SUB-Z0 LH28F400SUB
OCR Text ...is a high performance 4M (4,194,304 bit) block erasable non-volatile random access memory organized as either 256K x 16 or 512K x 8. The LH28F400SU includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 3. The impleme...
Description 4M (512K 】 8, 256K 】 16) Flash Memory

File Size 274.05K  /  34 Page

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