7.50 2 180 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB970 2SB0970
OCR Text	... PC Tj Tstg Ratings -15 -10 -7 -1 - 0.5 200 150 -55 ~ +150 Unit V V V A A mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:...50 Collector power dissipation PC (mW) -30 -10 -3 25C -1 Ta=-25C 75C 160 120 Collecto...
Description	Silicon PNP epitaxial planer type(For low-voltage output amplification)
File Size	36.21K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB976
OCR Text	...g (Ta=25C) Ratings -27 -18 -7 -8 -5 0.75 150 -55 ~ +150 Unit V V 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 5.10.2 0.45 -0.1 1.27 +0.2 2.30.2 ...
Description	Silicon PNP epitaxial planer type(For low-frequency output amplification)
File Size	34.79K / 2 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SC1384 2SC1383
OCR Text	...A W C C 1.27 13.50.5 0.7-0.2 0.70.1 8.60.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC1383 2SC1384 2SC1383 2SC1384 (Ta=25C) ...
Description	Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
File Size	46.40K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC3931
OCR Text	...ansfer susceptance bfe (mS) 10.7 25 0 - 0.4mA -1mA 100 150 -2mA 10.7 58 Reverse transfer susceptance bre (mS) yie=gie+jbie VCE=10V 150 -4mA 100 yre=gre+jbre VCE=10V -1 -4mA -2 Input susceptance bie (mS) 16 14 12 58 -2mA...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification)
File Size	55.77K / 3 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text	... ROHM : EMT3 EIAJ : SC-75A 0.7 1.6 (1) Emitter (2) Base (3) Collector 0.65 0.65 !Packaging specifications and hFE Type Packa...50 2/2 ...
Description	High-Frequency Amplifier Transistor(11V 50mA 3.2GHz) High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz) Transistors > Small Signal Bipolar Transistors(up to 0.6W)
File Size	61.54K / 2 Page	View it Online	Download Datasheet

				http:// NEC[NEC] NEC Corp.
Part No.	2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text	... * High fT * Low Cre * Low NF : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.4 dB TY...50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforatio...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
File Size	62.00K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...ICBO IEBO hFE fT Cre \|S21e\|2 NF 7.0 75 12.0 0.3 8.5 2.5 4.0 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITIONS VCB = 5 V, IE =...50 VCE = 3 V Free Air IC - Collector Current - mA 40 100 30 60 mW 50 20 10 ...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	...ICBO IEBO hFE fT Cre \|S21e\|2 NF 7.0 75 12.0 0.4 8.5 1.5 2.5 0.7 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITIONS VCB = 5 V, IE =...50 VCE = 3 V 40 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE PT - Total Power Dissipation - ...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...mA,f = 1.0 GHz VCE = 10 V, IC = 7 mA,f = 1.0 GHz A A 1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. 2 Measured with 3 termi...50 to 100 FB R27 80 to 160 GB R28 125 to 250 2 2SC5011 TYPICAL CHARACTERISTICS (TA = 25 C) T...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	... mA,f = 1.0 GHz VCE = 8 V, IC = 7 mA,f = 1.0 GHz A A 1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. 2 Measured with 3 termi...50 to 100 FB R37 80 to 160 GB R38 125 to 250 2 2SC5012 TYPICAL CHARACTERISTICS (TA = 25 C) T...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

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