78. pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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78. Datasheet PDF File

For 78. Found Datasheets File :: 568774 Search Time::18.234ms
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				Meder Electronic
Part No.	HF12-1A54-8
OCR Text	7 7 3 1 8 3 9 9 0 + 1 / 5 0 8 2 9 5 0 7 7 1 + 8 5 2 / 2 9 5 5 1 6 8 2 \| e m a i l : i n f o @ m e d e r . c o m \| e m a i l : s a l e s u s a @ m e d e r . c o m \| e m a i l : s a l e s a s i a @ m e d e r . c ...
Description	HF Reed Relay
File Size	85.76K / 1 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text	...ingle 5 V (10%) (HM51(S)4260C-6/7/8) (5%) (HM51(S)4260C-6R) High speed -- Access time: 60 ns/70 ns/80 ns (max) Low power dissipation -- Active mode: 825 mW/788 mW/770 mW/688 mW (max) -- Standby mode: 11 mW (max) (HM51(S)4260C-6/7/8) 10.5 mW...
Description	80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
File Size	260.25K / 27 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D32020GDL HYS64D32020GDL-5-B HYS64D32020GDL-6-B HYS64D32020GDL-7-B
OCR Text	7 / 8 ] - B H Y S 64 D 1 6 0 0 x G D L - [ 6 / 7 / 8 ] - B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s Never stop thinking. Edition 2003-08 Published by Infineon T...
Description	DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank 200-Pin Small Outline Dual-In-Line Memory Modules
File Size	433.11K / 31 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text	...(May 1998) * Added KM4132G271B-7 product(143MHz @ CL =3). CMOS SGRAM Revision 2.3 (March 1998) * Added Reverse Type Package in ODERI...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
File Size	1,032.84K / 51 Page	View it Online	Download Datasheet

				SemiWell Semiconductor
Part No.	MCK100-8
OCR Text	... (1) 1.2 10 200 1.7 VTM V IGT Gate Trigger Current (2) TC = 25 C TC = - 40 C VD = 7 V, RL=100 ...8 1.2 V VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical ...
Description	Sensitive Gate Silicon Controlled Rectifiers
File Size	533.19K / 5 Page	View it Online	Download Datasheet

				TE Connectivity Ltd
Part No.	0-519021-8 411-18265 2-744002-7 0-0519024-2
OCR Text	...417 1,5 2,5 4 2,2 - 3,0 3,4 - 3,7 4,8 5,3 539 956-2 matrize pn 0-539956-2 411-18265 / rev. a1 die set pn 0-539956-2 411-18265 / rev. a1 seite / page 4 of 11 3 matrizen, ein- und ausbau 3 die installation and removal bild / figure 2 mat...
Description	This ERGOCRIMP Die is suitable to crimp the following crimp contacts
File Size	128.42K / 11 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text	...o 10 2.5 0.3 DIA SOURCE 0.7 0.1 GATE 4.0 MIN. NE8500200() NE8500200-WB() NE8500200-RG(*) NE8500295-4 NE8500295-6 NE8500295-8 33.8 min 8.0 min 5.9 0.2 33.8 min 33.8 min 33.5 min 10.5 min 9.5 min 8.0 min 3.5 to...
Description	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
File Size	47.52K / 8 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc.
Part No.	MAC210-8 MAC210-10 MAC210-4 MAC210-6 MAC210A10 MAC210A6 MAC210A8 MAC210A4
OCR Text	... 80 70 60 0 1.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2.0 9.0 10.0 14.0 CONDUCTION ANGLE = 360 12.0 10.0 8.0 6.0 4.0 2.0 0 0 1.0 4.0 5.0 6.0 7.0 8.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 9.0 10.0 FIGURE 2 --...
Description	TRIACs 10 AMPERES RMS 200 thru 800 VOLTS
File Size	67.01K / 4 Page	View it Online	Download Datasheet

				LINEAR[Linear Integrated Systems] Linear Integrated Syste...
Part No.	LS3954-8 LS3958 LS3954 LS3954A LS3955 LS3956
OCR Text	...LS 400mW @ 25C BOTTOM VIEW 1 S1 7 G2 6 D2 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate to Drain or Source Voltage 6...8.13) 0.290 (7.37) 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.016 0.019 DIM. A ...
Description	LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
File Size	30.06K / 2 Page	View it Online	Download Datasheet

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