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    BCM1250

ETC
Broadcom Corporation.
Part No. BCM1250
OCR Text ...w power dissipation of 8-10W (@ 800 MHz) * High functional integration Programming * Instruction Setease and flexibility based on MIPS64 Arc...1000 Ports FPGA HyperTransport * Extensive, on-chip debug features * 8-10W power dissipation ...
Description HIGH PERFORMANCE INTEGRATED 64 BIT MULTIPROCESSOR

File Size 136.73K  /  2 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...) IDSS VIN(th) IIN(1) 60 1.3 800 Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 C, VIN = 0 V ...1000 225 165 --- --- C mJ ID = 3.5 A, Tj = 25 C, Vbb = 32 V ID = 3.5 A, Tj = 150 C, Vbb ...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V Figure 2. Figure 3. PRODUCT INFORMATION 3 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGR...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...E 16 14 12 10 8 C 10 1 800 V 1200 V Ciss 10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 C 0.9 -1 Crss 0 5 10 15 ...1000 1250 1500 V 2000 VCE 0 0 250 500 750 1000 1250 1500 V 2000 VCE Semiconductor Group 6 ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CD5356B CD5364B CD5349B CD5339B CD5345B CD5360B CD5361B CD5362B CD5363B CD5365B CD5366B CD5367B CD5368B CD5369B CD5370B

MICROSEMI CORP-LAWRENCE
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Part No. CD5356B CD5364B CD5349B CD5339B CD5345B CD5360B CD5361B CD5362B CD5363B CD5365B CD5366B CD5367B CD5368B CD5369B CD5370B CD5371B CD5372B CD5373B CD5374B CD5375B CD5376B CD5377B CD5378B CD5379B CD5333B CD5334B CD5335B CD5336B CD5337B CD5338B CD5340B CD5341B CD5342B CD5343B CD5344B CD5346B CD5347B CD5348B CD5350B CD5351B CD5352B CD5353B CD5354B CD5355B CD5357B CD5358B CD5359B CD5334 CD5339A D5337A CD5350A CD5350 CD5370 CD5333
OCR Text ...280 350 400 500 620 720 760 760 800 1000 64 MILS TYPE NUMBER mA 380 350 320 290 260 240 220 200 200 175 175 150 150 150 125 125 100 100 100 75 75 70 65 65 65 50 50 50 50 50 40 40 30 30 30 25 25 20 20 20 20 20 15 15 15 12 12 A 3...
Description surface mount silicon Zener diodes
4.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ZENER DIODE CHIPS
13 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
56 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 81.71K  /  2 Page

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    CMZ5356B CMZ5364B CMZ5349B CMZ5345B CMZ5381B CMZ5346B CMZ5352B CMZ5357B CMZ5359B CMZ5361B CMZ5367B CMZ5388B CMZ5342B CMZ

CENTRAL[Central Semiconductor Corp]
Part No. CMZ5356B CMZ5364B CMZ5349B CMZ5345B CMZ5381B CMZ5346B CMZ5352B CMZ5357B CMZ5359B CMZ5361B CMZ5367B CMZ5388B CMZ5342B CMZ5343B CMZ5344B CMZ5347B CMZ5348B CMZ5350B CMZ5351B CMZ5353B CMZ5354B CMZ5355B CMZ5358B CMZ5360B CMZ5362B CMZ5363B CMZ5365B CMZ5366B CMZ5368B CMZ5369B CMZ5370B CMZ5371B CMZ5372B CMZ5373B CMZ5374B CMZ5375B CMZ5376B CMZ5377B CMZ5378B CMZ5379B CMZ5380B CMZ5382B CMZ5383B CMZ5384B CMZ5385B CMZ5386B CMZ5387B
OCR Text ...280 350 400 500 620 720 760 760 800 1000 1150 1250 1500 1500 1650 1750 1750 1850 1850 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Note 1. Surge Current (ir) - Maximum allowable peak, non...
Description HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...al Reverse Recovery vs. dif/dt 800 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C 600 VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C I F = 3 0A di(re c)M /dt - (A / s) Q R R - (nC ) ...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    CY6264 CY6264-55SC CY6264-55SNC CY6264-70SC CY6264-70SNC CY6264-70SNI

CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY6264 CY6264-55SC CY6264-55SNC CY6264-70SC CY6264-70SNC CY6264-70SNI
OCR Text ...ED ICC vs. CYCLE TIME 600 800 1000 0.50 10 20 30 40 SUPPLY VOLTAGE(V) CAPACITANCE(pF) CYCLE FREQUENCY (MHz) Truth Table CE1 H X L L L CE2 X L H H H WE X X H L H OE X X L X H Input/Output High Z High Z Data Out...
Description Memory : MicroPower SRAMs
8K x 8 Static RAM
From old datasheet system
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????) 8K X 8 STANDARD SRAM, 55 ns, PDSO28
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????) 8K X 8 STANDARD SRAM, 70 ns, PDSO28
Single Supply RS232C Line Driver/Receiver(氓??莽?碌忙潞?RS232C 莽潞驴忙?露氓??氓?篓茂录?2氓??2忙?露茂录?)

File Size 252.27K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ... 0 0 200 400 600 800 Mean on-state current, IT(AV) - (A) Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissip...1000 Tj = 25C 99 % Tj = 125C 1% 1 U pp er lim it IT QS tp = 1ms dI/dt VGD ...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...2t 900 Conduction 5 800 Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 0 1 ms 10 1 23 5 10 20 700 50 d.c. Halfwave 3 phase ...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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