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Motorola
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| Part No. |
MHVIC915R2
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| OCR Text |
...z BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * On-Chip Current Mirror gm Sensing FET for Self Bias ... |
| Description |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
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| File Size |
463.26K /
12 Page |
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it Online |
Download Datasheet
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MHVIC915NR2
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| OCR Text |
...15 W P1dB, Full Frequency Band (921 - 960 MHz) Power Gain -- 30 dB @ P1dB Power Added Efficiency = 56% @ P1dB * Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power * Characterized with Series Equivalent Large - Signal ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
489.75K /
16 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
...z BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * On-Chip Current Mirror gm Sensing FET for Self Bias ... |
| Description |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
View
it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...equency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain -- 31 dB Power Added Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = - 65 dBc Spectral Regrowth @ 600 kHz Offset = - 83 dBc EVM -- 1.5% * Capable of Handling 5:1 VSWR, @ 26 Vd... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
View
it Online |
Download Datasheet |
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Freescale (Motorola)
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| Part No. |
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1
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| OCR Text |
...equency band (869 - 894 mhz and 921 - 960 mhz) power gain - 17.5 db drain efficiency - 60% gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 650 ma, p out = 50 watts avg., full frequency band (869 - 894 m... |
| Description |
RF Power Field Effect Transistors
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| File Size |
458.84K /
16 Page |
View
it Online |
Download Datasheet |
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Freescale Semiconductor
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| Part No. |
MRF5S9101NBR1 MRF5S9101NR1
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| OCR Text |
...equency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 -... |
| Description |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
573.86K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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