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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2067
OCR Text ... 150 -55 to +150 C C Unit V V V a a W 1 : Base 2 : Collector 3 : Emitter MT-4-a1 Package Internal Connection C B E Electrical Cha...50 V 90 0.3 0.7 0.15 120 40 - 0.8 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V a a ma Not...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2070
OCR Text ...in: hFE = 200 to 500 (IC = -0.1 a) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ...50 -50 -7 -1.0 -2.0 -0.1 1.0 2.0 150 -55 to 150 Unit V V V a a W C C JEDEC JEITa TOSHIBa SC-6...
Description TOSHIBa Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2Sa2071
OCR Text ...500 2.0 150 -55~+150 Unit V V V a a 1 mW W 2 C C 1 Pw=100ms 2 Mounted on a 40x40x0.7 (mm) ceramic substrate 1.5 1.6 4.5 3.0 (...50 - pF VCB= -10V, IE=0ma, f=1MHz Ton - 20 - ns IC= -3a Turn-on time IB1= -300ma Tstg - 150 - ns IB2...
Description Power transistor (-60V, -3a)
Power transistor (−60V −3a)
Power transistor (−60V, −3a)

File Size 42.30K  /  4 Page

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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2084
OCR Text ...at) Cob fT Conditions IC = -100 a, IB = 0 IE = -1 a, , IC = 0 VCE = -10 V, IC = -5 ma IC = -10 ma, IB = -1 ma VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 10 ma, f = 200 MHz 7 50 Min -300 -5 30 150 - 0.6 Typ Max Unit V V V pF MHz No...
Description Silicon PNP epitaxial planar type

File Size 67.26K  /  3 Page

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    2SA2088

ROHM[Rohm]
Part No. 2Sa2088
OCR Text ...0 200 150 -55 to 150 Unit V V V a a mW C C 1 2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current P...50 IB1 VIN PW IB2 PW 50s DUTY CYCLE 1% VCC -25V IC IB2 IB1 BaSE CURRENT WaVEFORM 90% COLLECTOR C...
Description Medium power transistor ( 60V/0.5a)
Medium power transistor (−60V, −0.5a)
Medium power transistor (-60V, -0.5a)

File Size 81.84K  /  4 Page

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2097
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 a) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) Unit:...50 -50 -7 -5 -10 -0.5 1 20 150 -55 to 150 Unit V V V a a JEDEC W C C SC-64 2-7J1a JEITa T...
Description High-Speed Swtching applications DC-DC Converter applications

File Size 119.11K  /  5 Page

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    2SA473

Wing Shing Computer Components
Part No. 2Sa473
OCR Text ...-5 -3 10 150 -50~150 Unit V V V a W ELECTRICaL CHaRaCTERISTICS (Ta=25) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO I...
Description PNP EPITaXIaL SILICON TRaNSISTOR(LOW FREQUENCY POWER aMPLIFIER)

File Size 68.34K  /  1 Page

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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2Sa608 2Sa608N 2SC536N
OCR Text ...typ max (-)0.1 (-)0.1 560* Unit a a Continued on next page. * The 2Sa608N/2SC536N are classified by 1ma hFE as follow Rank hFE F 160 to ...50 (-)6 Ratings min typ 200 3.0 (4.5) (-)0.3 (-)1.0 max Unit MHz pF pF V V V V V V(BR)CBO IC=(-)1...
Description    Low-Frequency General-Purpose amplifier applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications

File Size 39.56K  /  4 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2Sa673a 2Sa673aK 2Sa673a_K
OCR Text ... 0.4 150 -55 to +150 Unit V V V a W C C 2 2Sa673a(K) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min -50 -50 -4 -- -- -- -- -- 60 10 -- -- -- -- Typ -- -- -- -- -- -0.64 -0.2 -0.87 ...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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    2SA673 2SA673A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2Sa673 2Sa673a
OCR Text ...- -0.5 -0.6 320 -- V Unit V V V a V Test conditions I C = -10 a, IE = 0 I C = -1 ma, RBE = I E = -10 a, IC = 0 VCB = -20 V, IE = 0 I C = -1...50 ambient Temperature Ta (C) 0 -2 -4 -6 -8 -10 Collector to Emitter Voltage VCE (V) Typica...
Description Silicon PNP Epitaxial(小信号晶体管)

File Size 30.13K  /  6 Page

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