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  a.c.switch Datasheet PDF File

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...osses S S S G 1 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unpre...C/W C/W TJ, TSTG IS ISM TA = 25C TA = 70C IDM PD Symbol VDS VGS ID IRF7807 V 30 20 8.3 6.6 66 2.5 1....
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...ching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to ...C A IRF7807 30 12 8.3 6.6 66 W A IRF7807A Units V Thermal Resistance Parameter Maximum Junction-t...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...tions S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve a...C/W C/W TJ, TSTG IS ISM TA = 25C TL = 90C IDM PD Symbol VDS VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...C Converters S S S G 1 8 7 A A D D D D 2 Description These new devices employ advanced HEXFET(R) Power MOSFET technology to achie...C/W C/W TJ, TSTG IS ISM 2.5 50 TA = 25C TL = 90C IDM PD Symbol VDS VGS ID 14.5 14.2 100 2.5 2.4 -55 ...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...00 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through are on page 10 Notes www.irf.com 1 12/16/99 IRF840AS/L Static @ TJ = 25C (unless o...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7/99 www.irf.com IRF840A Static @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C ...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    Philips
Part No. ISP1362
OCR Text ...ral description The ISP1362 is a single-chip Universal Serial Bus (USB) On-The-Go (OTG) controller integrated with the advanced Philips Sla...c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 19 ...
Description Single-chip Universal Serial Bus On-The-Go controller

File Size 528.15K  /  148 Page

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