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  commutated Datasheet PDF File

For commutated Found Datasheets File :: 795    Search Time::2.078ms    
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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
OCR Text ...he limits of safe operation for commutated source-drain current versus re-applied drain voltage when the source-drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

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    Philips
Part No. BT148SERIES
OCR Text ...controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 8 A; VR = 10...
Description logic level

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    Philips
Part No. BT148WSERIES
OCR Text ...controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 4 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 2 A; VR = 35 ...
Description logic level

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
OCR Text ...he limits of safe operation for commutated source-drain current versus re-applied drain voltage when the source-drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VR for a given commutation speed. It is ...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    BT169

Philips Semiconductors
Part No. BT169
OCR Text ...controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM =67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1k ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35...
Description Thyristor logic level

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    MC1241A MC1141A DK1241A

ETC[ETC]
Part No. MC1241A MC1141A DK1241A
OCR Text ... Servo Incremental Sinusoidally commutated Yes Yes Yes Yes Yes Yes Yes Yes MC1231A (2 axes) MC1131A (1 axis) DK1231A MC1241 series 2 or 1 Stepper Incremental Microstepping Yes Yes Yes Yes Yes Yes Yes MC1241A (2 axes) MC1141A (1 axis) DK1241...
Description Advanced Microstepping Motion Control Chipset

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    AT303 AT303S08

POSEICO SPA
POSEICO[Power Semiconductors]
Part No. AT303 AT303S08
OCR Text ...led delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 1200 A, gate 10V 5ohm Linear ramp up to 75% of...
Description PHASE CONTROL THYRISTOR

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    BT148-600R BT148 BT148-400R BT148-500R

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT148-600R BT148 BT148-400R BT148-500R
OCR Text ...controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 8 A; VR = 10...
Description RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 10 Watts
Thyristors logic level

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    BT148W-600R BT148W BT148W-400R BT148W-500R

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT148W-600R BT148W BT148W-400R BT148W-500R
OCR Text ...controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 4 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 2 A; VR = 35 ...
Description Thyristors logic level(可控硅逻辑电平)

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For commutated Found Datasheets File :: 795    Search Time::2.078ms    
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