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  dme Datasheet PDF File

For dme Found Datasheets File :: 225    Search Time::3.593ms    
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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. MSC1075MP
OCR Text ...GNED FOR HIGH POWER PULSED IFF, dme, TACAN APPLICATIONS 80 W (typ.) IFF 1030 - 1090 MHz 75 W (min.) dme 1025 - 1150 MHz 50 W (typ.) TACAN 960 -1215 MHz 8.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESIST...
Description RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

File Size 137.29K  /  3 Page

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    MS2472

Microsemi, Corp.
Advanced Power Technology
Part No. MS2472
OCR Text ...D FOR HIGH POWER PULSED IFF AND dme APPLICATIONS 600 W (typ.) IFF 1030 - 1090 MHz 550 W (min.) dme 1025 - 1150 MHz 1025 - 1150 MHz POUT = 550 WATTS GP = 5.6 dB MINIMUM GOLD METALLIZATION INTERNAL INPUT/OUTPUT MATCHED COMMON BASE CONFIGURATI...
Description Air dme 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (&#181;sec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

File Size 135.45K  /  4 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. MSC1015MP
OCR Text ...GNED FOR HIGH POWER PULSED IFF, dme, TACAN APPLICATIONS 20 W (typ.) IFF 1030 - 1090 MHz 15 W (min.) dme 1025 - 1150 MHz 15 W (typ.) TACAN 960 -1215 MHz REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABIL...
Description RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

File Size 92.36K  /  3 Page

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    HVV1012-060

HVVi Semiconductors, Inc.
Part No. HVV1012-060
OCR Text ...E Pulse, 1% PACKAGE PACKAGE for dme and TCAS Apllications PACKAGE PACKAGE PaCKaGE The innovative Semiconductor Company! HVV1012-060 PRODUCT OVERVIEW TM L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10s Pulse, 1% Duty for dme...
Description L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for dme and TCAS Apllications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for dme and TCAS Apllications

File Size 705.74K  /  2 Page

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    LAPIS Semiconductor Co....
Part No. ML620Q132
OCR Text ...1 sin0* sout0* cmp 1 p* dme int 1 f ed l620q130 - 0 2 ml620q1 3 1/2/3/4/5/6 6 / 33 ml620q1 34/ml620q135/ml620q136 block diagram ? * ? indicates the secondary, tertiary or quarternary function. figu...
Description    16-bit micro controller

File Size 494.47K  /  33 Page

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    MAGX-000912-250L00 MAGX-000912-SB1PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-000912-250L00 MAGX-000912-SB1PPR
OCR Text ...vionics: mode - s, tcas, jtids, dme and tacan . product description the magx - 000912 - 250l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military pulsed avio...
Description GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty

File Size 757.09K  /  6 Page

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    MAGX-000912-125L00 MAGX-000912-SB0PPR

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAGX-000912-125L00 MAGX-000912-SB0PPR
OCR Text ...vionics: mode - s, tcas, jtids, dme and tacan . product description the magx - 000912 - 125l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military pulsed avio...
Description GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty

File Size 759.92K  /  6 Page

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    HVV1214-100 HVV1214-100-EK

HVVi Semiconductors, Inc.
Part No. HVV1214-100 HVV1214-100-EK
OCR Text ...tions in the L-Band including G-dme,A-dme, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY (MHz) VDD (V) IDQ (mA) Power (W) GAIN (dB) (%) IRL (dB) VSWR 20:1 1400 50 100 120 20 45 ...
Description L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

File Size 784.41K  /  5 Page

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    HVV1012-100

HVVi Semiconductors, Inc.
Part No. HVV1012-100
OCR Text ... 10s Pulse, 1% Duty PACKAGE for dme and TCAS Applications PACKAGE PACKAGE PaCKaGE designed for HVV1012-100 radar applications The high enhancement mode RF transistor voltage siliconpower L-Band pulseddevice is a high operating over puls...
Description L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for dme and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for dme and TCAS Applications

File Size 810.16K  /  2 Page

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