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  eoff Datasheet PDF File

For eoff Found Datasheets File :: 4826    Search Time::2.125ms    
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    IGW40T120 IGW40T12009

Infineon Technologies AG
Part No. IGW40T120 IGW40T12009
OCR Text ...energy td(on) tr td(off) tf Eon eoff Ets T j = 25 C, V C C = 6 00V, I C = 40A, V G E = 0/ 1 5V , R G = 1 5 , L 2 ) = 180nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. 48 34 480 70 3.3 3.2 6.5 mJ ns Symbol Conditi...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 350.12K  /  13 Page

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    IGW30N60T IGP30N60T IGP30N60T09

Infineon Technologies AG
Part No. IGW30N60T IGP30N60T IGP30N60T09
OCR Text ...energy td(on) tr td(off) tf Eon eoff Ets T j = 25C , V C C = 40 0 V,I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 , L 1 ) =1 36nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 2) Symbol Conditions IGP30N60T IGW30N60...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 440.57K  /  13 Page

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    SGW13N60UFD SGW13N60UFDTM

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW13N60UFD SGW13N60UFDTM
OCR Text ...stics td(on) tr td(off) tf Eon eoff Ets td(on) tr td(off) tf Eon eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise ...
Description Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT

File Size 594.42K  /  8 Page

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    SGW13N60UF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW13N60UF
OCR Text ...stics td(on) tr td(off) tf Eon eoff Ets td(on) tr td(off) tf Eon eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise ...
Description Ultra-Fast IGBT

File Size 535.65K  /  7 Page

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    SGW15N60 SGW15N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW15N60 SGW15N60RUF
OCR Text ...stics td(on) tr td(off) tf Eon eoff Ets td(on) tr td(off) tf Eon eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time R...
Description    Short Circuit Rated IGBT

File Size 554.64K  /  7 Page

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    SKW15N60 SKB15N60 SKP15N60

INFINEON[Infineon Technologies AG]
Part No. SKW15N60 SKB15N60 SKP15N60
OCR Text eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - ...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...

File Size 445.74K  /  14 Page

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    FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FGA15N120ANTDTU FGA15N120ANTDTUF109

Fairchild Semiconductor
List of Unclassifed Manufacturers
Part No. FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FGA15N120ANTDTU FGA15N120ANTDTUF109
OCR Text ... TC = 25C * Low switching loss: eoff, typ = 0.6mJ @ IC = 15A and TC = 25C * Extremely enhanced avalanche capability tm Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers sup...
Description 1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability

File Size 832.67K  /  10 Page

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    SGD04N60 SGP04N60 SGP04N6007

Infineon Technologies AG
Part No. SGD04N60 SGP04N60 SGP04N6007
OCR Text eoff compared to previous generation C combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls G E - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribut...
Description Fast IGBT in NPT-technology 75% lower eoff compared to previous generation

File Size 341.22K  /  12 Page

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    IHW25N120R2

Infineon Technologies AG
Part No. IHW25N120R2
OCR Text ...switching energy td(off) tf Eon eoff Ets T j = 25 C, V C C = 6 00V, I C = 25A V G E = 0 / 1 5V, R G = 1 0 , 324 55.8 1.59 1.59 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=175 C Parame...
Description Reverse Conducting IGBT with monolithic body diode

File Size 400.71K  /  12 Page

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    IGW75N60T IGW75N60T09

Infineon Technologies AG
Part No. IGW75N60T IGW75N60T09
OCR Text ...ons td(on) tr td(off) tf Eon eoff Ets Turn-off energy Total switching energy T j = 25 C, V C C = 4 00V, I C = 75A, V G E = 0/ 1 5V , R G = 5, L 2 ) = 100nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. ...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 396.36K  /  12 Page

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