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				Advanced Micro Devices, Inc.
Part No.	AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT AM42DL3244GT25IT AM42DL3224GT85IT AM42DL3244GT71IT AM42DL3234GT71IT AM42DL3224GB40IT AM42DL3234GB35IT AM42DL3224GT70IT M420000022
OCR Text	... from one bank while executing erase/program functions in other bank ? zero latency between read and write operations secured silicon (secsi) sector: extra 256 byte sector ? factory locked and identifiable: 16 bytes available for secur...
Description	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
File Size	559.78K / 64 Page	View it Online	Download Datasheet

				MACRONIX INTERNATIONAL CO LTD
Part No.	MX29GA128EHXCI-90G
OCR Text	... - 2.7 to 3.6 volt for read, erase, and program operations - vcc=2.7v~3.6v ? byte/word mode switchable - 33,554,432 x 8 / 16,777,216 x 16 (mx29ga256e h/l for x8/x16; mx29ga257e h/l for x16 only) - 16,777,216 x 8 / 8,388,608 ...
Description	16M X 8 FLASH 3V PROM, 90 ns, PBGA64
File Size	2,262.28K / 70 Page	View it Online	Download Datasheet

				Advanced Micro Devices, Inc.
Part No.	AM30LV0064DJ40F2IT AM30LV0064DJ40E2IT AM30LV0064DJ40WGIT
OCR Text	...ge range: 2.7 to 3.6 volt read, erase, and program operations ? separate v ccq for 5 volt i/o tolerance automated program and erase ? page program: 512 + 16 bytes ? block erase: 8 k + 256 bytes block architecture ? 8 kbyte blocks + 256 ...
Description	64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
File Size	580.90K / 41 Page	View it Online	Download Datasheet

				Macronix International
Part No.	MX25U3235FZNI10G MX25U3235FM2I10G
OCR Text	................ 47 9-16. sector erase (se) .................................................................................................................................... 48 9-17. block erase (be32k) ................................
Description	1.8V 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
File Size	1,056.57K / 90 Page	View it Online	Download Datasheet

				Advanced Micro Devices, Inc.
Part No.	AM29DL640H70EEN AM29DL640H55EI AM29DL640H55WHEN AM29DL640H55EE AM29DL640H55EIN AM29DL640H55WHI AM29DL640H60WHEN AM29DL640H60EE AM29DL640H60EIN
OCR Text	... from one bank while executing erase/program functions in another bank. ? zero latency between read and write operations flexible bank tm architecture ? read may occur in any of the three banks not being written or erased. ? four banks...
Description	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位）.0伏的CMOS只，同步写闪
File Size	865.42K / 54 Page	View it Online	Download Datasheet

				Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI AM29BDS128HD9VMI AM29BDS640HD8 AM29BDS640HD9 AM29BDS64HD8VMI AM29BDS128HD8VFI AM29BDS128HD8VMI AM29BDS128HD9VKI AM29BDS64HD8VFI AM29BDS64HD9VFI AM29BDS64HD9VKI AM29BDS128HE8 AM29BDS640HE8 AM29BDS128HE8VKI AM29BDS128HE8VMI AM29BDS128HE8VFI AM29BDS64HE8VMI AM29BDS64HE8VFI AM29BDS64HD9VMI AM29BDS64HE8VKI AM29BDS64HE9VFI AM29BDS64HE9VMI AM29BDS64HE9VKI AM29BDS128HE9VKI AM29BDS128HE9VFI
OCR Text	...ngle 1.8 volt read, program and erase (1.65 to 1.95 volt) manufactured on 0.13 m process technology versatileio? (v io ) feature ? device generates data output voltages and tolerates data input voltages as determined by the voltage on th...
Description	128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
File Size	919.83K / 89 Page	View it Online	Download Datasheet

				Sharp Corporation
Part No.	LH28F320BFHE-PBTLZ2
OCR Text	................... 27 1.2.7 block erase, full chip erase, (page buffer) program and otp program performance.................... 28 2 related document information.............................. 29 contents rev. 2.44 ...
Description	32M (x16) Flash Memory
File Size	685.34K / 36 Page	View it Online	Download Datasheet

For erase Found Datasheets File :: 13976 Search Time::1.25ms
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