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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4655 IKA03N120H2 Q67040-S4649
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| OCR Text |
...s td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 8 00V, I C = 3A , V G E = 0V/ 15V, R G = 8 2 , 2) L = 180nH, 2) C = 4 0 pF Energy losses include "tail" and diode 2) reverse recovery. 9.2 5.2 281 29 0.14 0.15 0.29 mJ ns Symbol Cond... |
| Description |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125
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| File Size |
332.84K /
14 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4654 IGA03N120H2 Q67040-S4648
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| OCR Text |
...y td(on) tr td(off) tf Eon Eoff ets T j = 25 C V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2 1) L = 180nH 1) C = 4 0 pF Energy losses include "tail" and diode 2) reverse recovery. 9.2 5.2 281 29 0.14 0.15 0.29 mJ ns Symbol Conditions ... |
| Description |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak
HighSpeed 2-Technology
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| File Size |
198.98K /
10 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4650 IHP10T120
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| OCR Text |
...A td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 6 10V, I C = 10A, V G E = 0/ 15V, R G = 8 1 , L 2 ) = 180nH, 2) C =39pF Energy losses include "tail" and diode reverse recovery. 45 20 520 82 0.68 0.78 1.46 mJ ns Symbol Conditions V... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
331.26K /
14 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4521 IGW60T120
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| OCR Text |
...y td(on) tr td(off) tf Eon Eoff ets T j =2 5 C , V C C = 60 0 V, I C = 6 0 A, V G E = 0/ 15 V , R G = 10 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 44 480 80 4.3 5.2 9.5 mJ ns Symbol Condit... |
| Description |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
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| File Size |
404.35K /
12 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4514 IKW08T120
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| OCR Text |
...s td(on) tr td(off) tf Eon Eoff ets T j =2 5 C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 40 23 450 70 0.67 0.7 1.37 mJ ns Symbol Con... |
| Description |
LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE
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| File Size |
335.58K /
15 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGW21N60ED
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| OCR Text |
..." td(on) tr td(off) tf Eoff Eon ets td(on) tr td(off) tf Eoff Eon ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 29 60 238 140 0.8 0.6 1.4 28 62 338 220 1.3 0.8 2.1 86 18 39 -- -- -- -- 1.15 -- -- -- -- -- -- -- -- -- -- --... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
148.77K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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