|
|
|
Microsemi, Corp.
|
Part No. |
APT50GT120B2RDQ2G
|
Description |
insulated gate Bipolar Transistor - NPT Standard speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL igbt, TO-247
|
File Size |
224.58K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
GT15J321
|
Description |
insulated gate Bipolar Transistor Silicon N Channel igbt High Power Switching Applications fast Switching Applications
|
File Size |
175.02K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
GT50J121
|
Description |
insulated gate Bipolar Transistor Silicon N Channel igbt High Power Switching Applications fast Switching Applications
|
File Size |
156.40K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|