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74ALVC BCR400 MS06944 10SDT TSM11103 MAX31 000GLFS HMC322
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    Fagor
Part No. FS0402DI
OCR Text ... ta = 25 ? half cycle, q = 180 ? tc = 105 ? ta = 25 ? half cycle, 60 hz half cycle, 50 hz t = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20 ms max. 10s at 4.5mm from case ...
Description 400 V, sensitive gate SCR

File Size 134.23K  /  4 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...4K Pages (=2,048 Blocks) 1st half Page Register (=256 Bytes) 2nd half Page Register (=256 Bytes) 1 Page = 528 Byte 1 Block = 528 Bytes x 32 Pages = (16K + 512) Byte 1 Device = 528Bytes x 32Pages x 2048 Blocks = 264 Mbits 8 bit 16 B...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...4K Pages (=2,048 Blocks) 1st half Page Register (=256 Bytes) 2nd half Page Register (=256 Bytes) 1 Page = 528 Byte 1 Block = 528 Byte x 32 Pages = (16K + 512) Byte 1 Device = 528Bytes x 32Pages x 2048 Blocks = 264 Mbits 8 bit 16 By...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    Fagor
Part No. FS0402DH
OCR Text ...?conduction angle, t c = 115 ? half cycle, q = 180 ? t c = 115 ? half cycle, 60 hz half cycle, 50 hz t p = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20ms max. 10s max. -40 -40 a a a a a 2 s v a w w ? ? ? 4 2.5 33 30 4.5 8 4 5 0...
Description 400 V, 200 mA sensitive gate SCR

File Size 130.20K  /  4 Page

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    LITE-ON SEMICONDUCTOR CORP
Part No. MBR1080
OCR Text ...ard surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum forward voltage (note 1) 10 150 t j operating temperature range -5...
Description 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC

File Size 70.10K  /  2 Page

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    YENYO TECHNOLOGY Co., Ltd
YENYO TECHNOLOGY Co., L...
Part No. HFR60A12PD
OCR Text ...e current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. to-3p hfr60a12pd voltage range 1200 v current 60.0 ampere hyperfast recovery rectifier symbol v ...
Description Hyperfast Recovery Rectifier

File Size 936.43K  /  3 Page

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    ABB SWITZERLAND LTD SEMICONDUCTORS
Part No. 5STF15F1840
OCR Text ...: t j = -40 125 c, half sine waveform, f = 50 hz, note 1 mechanical data f m mounting force 22 2 kn m weight 0.48 kg d s surface creepage distance 25 mm d a air strike distance 13 mm ...
Description 2338 A, 1800 V, SCR

File Size 203.03K  /  15 Page

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    DCR1010G12 DCR1010G14 DCR1010G06 DCR1010G08 DCR1010G10

Dynex Semiconductor
Part No. DCR1010G12 DCR1010G14 DCR1010G06 DCR1010G08 DCR1010G10
OCR Text ...av) mean on - state current half wave resistive load 1010 a i t(rms) rms value - 1590 a i t continuous (direct) on - state current - 1430 a surge ratings symbol parameter ...
Description Phase Control Thyristor

File Size 635.00K  /  9 Page

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