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  hdmos-tm Datasheet PDF File

For hdmos-tm Found Datasheets File :: 126    Search Time::0.875ms    
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    IXFH52N30Q

IXYS Corporation
Part No. IXFH52N30Q
OCR Text ...classification  low r ds (on) hdmos tm process  rugged polysilicon gate cell structure  avalanche energy and current rated  fast intrinsic rectifier advantages  easy to mount  space savings  high power density symbol test condition...
Description (IXFx52N30Q) N-Channel Enhancement Mode Avalanche Rated

File Size 95.32K  /  2 Page

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    50N10

IXYS Corporation
Part No. 50N10
OCR Text ...ride isolation low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters synchronous rectifi...
Description Search --To IXFK150N10

File Size 138.52K  /  4 Page

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    IXFN180N20

IXYS Corporation
Part No. IXFN180N20
OCR Text ...ride isolation  low r ds (on) hdmos tm process  rugged polysilicon gate cell structure  unclamped inductive switching (uis) rated  low package inductance  fast intrinsic rectifier applications  dc-dc converters  battery chargers  ...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET

File Size 70.76K  /  2 Page

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    IXYS, Corp.
Part No. IXGT28N30A
OCR Text ...capability  newest generation hdmos tm process  mos gate turn-on - drive simplicity applications  ac motor speed control  dc servo and robot drives  dc choppers  uninterruptible power supplies (ups)  switched-mode and resonant-mode ...
Description 8-Channel, 625 kSPS, 12-Bit Parallel ADCs with a Sequencer; Package: LFCSP (5x5mm CP-32-2); No of Pins: 32; Temperature Range: Industrial 56 A, 300 V, N-CHANNEL IGBT, TO-268AA

File Size 93.21K  /  2 Page

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    IXYS
Part No. IXFH12N90 IXFM12N90 IXFH13N90 IXFH10N90
OCR Text ...ent mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 177.28K  /  4 Page

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    IXFN200N10P

IXYS Corporation
Part No. IXFN200N10P
OCR Text ...ride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? synchronous rectifi...
Description Polar HiPerFET Power MOSFET

File Size 81.83K  /  5 Page

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    IXTH40N30

IXYS Corporation
Part No. IXTH40N30
OCR Text ...ndard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l low package inductance (< 5 nh) - easy to drive and to protect l fast switching times applications l switch-mode and resonant-mode power supplies l...
Description (IXTH35N30 / IXTH40N30) MegaMOSTMFET

File Size 134.87K  /  4 Page

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    IXTH10N100

IXYS Corporation
Part No. IXTH10N100
OCR Text ...ndard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l low package inductance (< 5 nh) - easy to drive and to protect l fast switching times applications l switch-mode and resonant-mode power supplies l...
Description (IXTH10N100 / IXTH12N100) MegaMOS FET

File Size 131.73K  /  4 Page

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