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ADPOW[Advanced Power Technology]
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| Part No. |
APT5018BFLL APT5018SFLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.32mH, R = 25W, Peak I = 27A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
53.84K /
2 Page |
 View
it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5018BLL APT5018SLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L =3.32mH, R = 25W, Peak I = 27A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
51.49K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5019HVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 4.51mH, R = 25, Peak I = 24A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,... |
| Description |
POWER MOS V 500V 24A 0.190 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
59.96K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT5020BLC APT5020SLC
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L =3.85mH, R = 25W, Peak I = 26A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
34.78K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5020BVFR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,... |
| Description |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
61.42K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5020BVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,... |
| Description |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
58.88K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5020SVFR APT5020
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,... |
| Description |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm
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| File Size |
64.36K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5020 APT5020SVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,... |
| Description |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm
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| File Size |
61.79K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5022AVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 5.90mH, R = 25, Peak I = 21A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
te...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
58.67K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5024AVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 7.07mH, R = 25, Peak I = 18.5A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
60.55K /
4 Page |
View
it Online |
Download Datasheet |
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