mobile-sdram pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : EL0501 2N6356 HIP5010 2SB1255 ACS8947T 2012H 2SA1941B TH60P03
	Product Description
	Full Text Search

mobile-sdram Datasheet PDF File

For mobile-sdram Found Datasheets File :: 1126 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S56163LC K4S56163LC-RF
OCR Text	Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)F/R 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES * 2.5V power supply. * LVCMOS compatible wit...
Description	16Mx16 Mobile SDRAM 54CSP CAP 680UF 50V ELECT FM RADIAL
File Size	59.21K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text	Mobile SDRAM in 54BOC FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ...
Description	16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
File Size	112.21K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text	Mobile SDRAM in 54FBGA FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description	16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
File Size	111.59K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PMB8876
OCR Text	...nctions required for tomorrow's mobile phones. Its unique architecture makes S-GOLD2 TM the ideal fit for feature-enhanced terminals, allowi...SDRAM VBB1 VBB2 S-GOLD2 (PMB 8876) VRF Main I2S I2S / DAI TEAKLite(R) SSC GPTU GSM Ciphe...
Description	S-GOLD2?Multimedia Engine with Advanced EDGE Modem Functionality S-GOLD2-Multimedia Engine with Advanced EDGE Modem Functionality S-GOLD2⑩-Multimedia Engine with Advanced EDGE Modem Functionality
File Size	198.65K / 2 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
OCR Text	Mobile SDRAM in 54FBGA FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -...
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
File Size	111.99K / 12 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
OCR Text	Mobile SDRAM in 54FBGA FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	112.71K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text	Mobile SDRAM in 54FBGA FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
File Size	111.60K / 12 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT76C511
OCR Text	...ernet. In case the WLAN user is mobile, roaming functions are also supported at the DEW-B bridge. Its Dual Ethernet MAC architecture is useful in applications where bridging or routing is required between a public network through high speed...
Description	AT76C511 is a highly integrated WLAN Bridge-on-a-Chip based on two ARM7TDMI?RISC processors, two 10/100 Ethernet MACs, 32-bit DMA Channels, SRAM and Cache for program/data, UART, 3.3V operation, 208 pin LQFP package. Dual Ethernet to IEEE 802.11b WLAN Bridgeon-on-a-Chip(DEW-B) Dual Ethernet to IEEE 802.11b WLAN Bridge on-A Chip
File Size	47.76K / 3 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
Part No.	HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-HI HY57V281620AT-SI HY57V281620ALT-SI HY57V281620ALT-I HY57V281620AT-I
OCR Text	...us DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is ...SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will ...
Description	4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16\|3.3V\|4K\|K\|SDR SDRAM - 128M
File Size	78.25K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
OCR Text	Mobile SDRAM in 90FBGA FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -...
Description	16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
File Size	138.60K / 12 Page	View it Online	Download Datasheet

For mobile-sdram Found Datasheets File :: 1126 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |