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SAMSUNG[Samsung semiconductor]
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Part No. |
K4R271669E
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OCR Text |
...RDRAM device. These pins are de-multiplexed into a 24-bit ROWA (row-activate) or ROWR (row-operation) packet.
COL Pins: The principle use of these five pins is to
manage the transfer of data between the DQA/DQB pins and the sense amps o... |
Description |
128Mbit RDRAM(E-die)
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File Size |
288.04K /
20 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E-L1L K4S640432E-L75
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OCR Text |
... supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sample... |
Description |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
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File Size |
103.86K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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