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n-factor Datasheet PDF File

For n-factor Found Datasheets File :: 31811 Search Time::3.469ms
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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, V...Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit VDS 15 90% 0 25 50 75 100 125 ...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 36A, VGS = 0V TJ = 125C, IS = 36A, VGS = 0V TJ = 25C, IF = 36A, VR=20V di...Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 ...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V d...Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 ...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V d...Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A, VR=15V di...Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...ntegral reverse --- --- 180 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 210 320 ns TJ = 25C, IF = 28A --- 1.7 2.6 ...Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...ntegral reverse --- --- 230 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VGS = 0V --- 140 220 ns TJ = 25C, IF = 28A --- 670 1010...Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...howing the G integral reverse p-n junction diode. TJ = 25C, IS = 30A, V GS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 16A, VR=10V di/...Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...he integral reverse G S D p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A, VDD = 10V di/dt = 100A/s e e 2 ...factor D = t1/ t 2 2. Peak T J = P DM x Z thJA 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 +T A ...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	... showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 28V di/dt = 100A/s e e Int...Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) ...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

For n-factor Found Datasheets File :: 31811 Search Time::3.469ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |