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performances Datasheet PDF File

For performances Found Datasheets File :: 3215 Search Time::1.453ms
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				United Monolithic Semiconductors
Part No.	CHR2244
OCR Text	...le bias voltage Low cost & high performances plastic package Lead-free, Matt Tin (Green) solder plating n n n n n n Main Characteristics Tamb = +25C; Vcc = 3.1V Symbol Vcc_sb_i RF_sb_p RF_dl_p BW_dl G_ul BW_ul Parameter Standby DC ...
Description	5.8 GHz One Antenna Reflective Transponder for Tag GaAs Monolithic Microwave IC
File Size	4,931.88K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW4IC2020GNBR1 MW4IC2020NBR1
OCR Text	...- -- dB % IRL IMD Typical performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHz<Frequency<1990 MHz, 1 - Tone Saturated Pulsed Output Power (f = 1 kHz, Duty Cycle 10%...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	623.70K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1
OCR Text	... - 10 dB % dB dBc dB Typical performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Burs...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	804.29K / 24 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc.
Part No.	MHW1810
OCR Text	...ulouse, france introduction the performances of rf power amplifiers for base station transceivers results in a tradeo f f between linearit y , e f ficiency and gain. this tradeo f f leads to an optimum quiescent current. but the following p...
Description	LDMOS RF Power Transistors.(LDMOS射频功率 LDMOS射频功率晶体管。（LDMOS的射频功率管
File Size	48.72K / 2 Page	View it Online	Download Datasheet

				Atmel
Part No.	AT84AS008
OCR Text	...1:2/1:4 lvds 2.2 gsps at84cs001 performances ? 3.3 ghz full power input bandwidth (-3 db) ? gain flatness: 0.2 db (from dc up to 1.5 ghz) ? low input vswr: 1.2 maxi mum from dc to 2.5 ghz ? single tone performances (- 1dbfs): sfdr = -56 dbc...
Description	10-Bit 2.2 Gsps ADC
File Size	107.42K / 5 Page	View it Online	Download Datasheet

				E2V
Part No.	AT84AS008
OCR Text	...1:2/1:4 lvds 2.2 gsps at84cs001 performances ? 3.3 ghz full power input bandwidth (-3 db) ? gain flatness: 0.2 db (from dc up to 1.5 ghz) ? low input vswr: 1.2 maxi mum from dc to 2.5 ghz ? single tone performances (-1 dbfs): sfdr = -58 dbc...
Description	10-Bit 2.2 Gsps ADC
File Size	2,196.95K / 49 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S9070NR1
OCR Text	...9 dB % dBc dB Typical GSM CW performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Comp...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	542.25K / 16 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	AN572
OCR Text	...rder to obtain the best dynamic performances and avoid instability prob- lems. use a good ground plane or common return point for power and signals. all tracks must be wide and as short as possible, this is in order to minimize parasitic re...
Description	TSH150 AND TSH151 DEMOBOARD
File Size	51.15K / 4 Page	View it Online	Download Datasheet

				Vishay Siliconix http://
Part No.	Y162412K7560AR9R Y162512K7560AR9R Y162612K7560AR9R Y162712K7560AR9R Y162812K7560AR9R Y162412R7560AR9R Y162512R7560AR9R Y162612R7560AR9R Y162712R7560AR9R Y162812R7560AR9R Y162412K7560DW0R Y162512K7560DW0R Y162612K7560DW0R Y162712K7560DW0R Y162812K7560DW0R Y162412R7560DW0R Y162512R7560DW0R Y162612R7560DW0R Y162712R7560DW0R Y162812R7560DW0R Y162412K7560AW9R Y162512K7560AW9R Y162612K7560AW9R Y162712K7560AW9R Y162812K7560AW9R Y162412R7560AW9R Y162512R7560AW9R Y162612R7560AW9R Y162712R7560AW9R Y162812R7560AW9R Y162812K7560AR0R Y162812K7560AW0R Y162812K7560BR0R Y162812K7560BR9R Y162812K7560BW0R Y162812K7560BW9R Y162812K7560CR0R Y162812K7560CR9R Y162812K7560CW0R Y162812K7560CW9R Y162812K7560DR0R Y162812K7560DR9R Y162812K7560DW9R Y162812K7560FR0R Y162812K7560FR9R Y162812K7560FW0R Y162812K7560FW9R Y162812K7560QR0R Y162812K7560QR9R Y162812K7560QW0R Y162812K7560QW9R Y162412K7560AR0R Y162412K7560AW0R Y162412K7560BR0R Y162412K7560BR9R Y162412K7560BW0R Y162412K7560BW9R Y162412K7560CR0R Y162412K7560CR9R Y162412K7560CW0R Y162412K7560CW9R Y162412K7560DR0R Y162412K7560DR9R Y162412K7560DW9R Y162412K7560FR0R Y162412K7560FR9R Y162412K7560FW0R Y162412K7560FW9R Y162412K7560QR0R Y162412K7560QR9R Y162412K75
OCR Text	...ct foil@vishay.com * For better performances please contact us Top View Any value at any tolerance within resistance range INTRODUCTION VSMP Series is the industry's first device to provide High Rated power, Excellent load life st...
Description	Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of 【 0.05 ppm/∑C and Power Coefficient of 5 ppm at Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of 隆戮 0.05 ppm/隆?C and Power Coefficient of 5 ppm at Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of 卤 0.05 ppm/掳C and Power Coefficient of 5 ppm at Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of ± 0.05 ppm/°C and Power Coefficient of 5 ppm at
File Size	134.50K / 4 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6S9125NBR1 MRFE6S9125NR1
OCR Text	...n Typ Max Unit Typical GSM EDGE performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 920 - 960 MHz, EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrow...
Description	N-Channel Enhancement-Mode Lateral MOSFETs
File Size	588.79K / 18 Page	View it Online	Download Datasheet

For performances Found Datasheets File :: 3215 Search Time::1.453ms
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