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KP028J MDS140L BC846BM3 BC846BM3 ST205006 TIONA DE222M00 30005
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    Alliance Semiconductor
Part No. AS7C33256PFS32A AS7C33256PFS36A AS7C33256PFS32A-166TQC
OCR Text ...cles are initiated with adsp (regardless of we and adsc ) using the new external address clocked into the on-chip address register when adsp is sampled low, the chip enables are sampled active, and the output buffer is enabled with ...
Description 3.3V 256K x 32/36 pipeline burst synchronous SRAM
3.3V 256K x 32 pipeline burst synchronous SRAM, clock speed - 166 MHz

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    Alliance Semiconductor
Part No. AS7C33256PFD16A AS7C33256PFD18A AS7C33256PFD18A-100TQC AS7C33256PFD18A-100TQI AS7C33256PFD18A-133TQC AS7C33256PFD18A-133TQI AS7C33256PFD18A-150TQC AS7C33256PFD18A-150TQI AS7C33256PFD18A-166TQI AS7C33256PFD16A-133TQC AS7C33256PFD16A-133TQI AS7C33256PFD16A-100TQC AS7C33256PFD16A-100TQI AS7C33256PFD16A-150TQI AS7C33256PFD16A-150TQC AS7C33256PFD16A-166TQI AS7C33256PFD16A-166TQC
OCR Text ...ycles are initiated with adsp (regardless of we and adsc ) using the new external address clocked into the on-chip address register. when adsp is sampled low, the chip enables are sampled active, and the output buffer is enabled with oe ...
Description 3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 100 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, clock speed - 166 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 166 MHz

File Size 207.86K  /  11 Page

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    AVR1010

ATMEL Corporation
Part No. AVR1010
OCR Text ...e rtc in these devices will run regardless of the sleep-mode. the xmega family also supports two additional sleep-modes which are useful when a short wake-up time is needed: ? standby, which is power-down with system clock source stil...
Description Minimizing the power consumption of Atmel AVR XMEGA devices

File Size 203.76K  /  13 Page

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    BCR40RM-12LB BCR40RM-12LB-B00 BCR40RM-12LB-15

Renesas Electronics Corporation
Part No. BCR40RM-12LB BCR40RM-12LB-B00 BCR40RM-12LB-15
OCR Text ...convection no fins curves apply regardless of conduction angle resistive, inductive loads 120 120 t2.3 160 160 t2.3 100 100 t2.3 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 140 160 all fins are black painted aluminum and...
Description Triac medium Power Use

File Size 85.76K  /  8 Page

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    KM732V589A

Samsung Semiconductor
Part No. KM732V589A
OCR Text ... and reduces stand-by cur- rent regardless of clk. the km732v589a/l is fabricated using samsung s high per- formance cmos technology and is available in a 100pin qfp/ tqfp package. multiple power and ground pins are utilized to minimize g...
Description 32Kx32-Bit Synchronous Pipelined Burst SRAM

File Size 449.64K  /  15 Page

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    Renesas Technology
Part No. BCR5KM-14LC
OCR Text ...emperature no fins curves apply regardless of conduction angle 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads all fins are black painted aluminum and greased curves apply regardless of conduction angle...
Description Triac Medium Power Use

File Size 153.04K  /  8 Page

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    PEEL18CV8P-10 PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV8P-5 PEEL18CV8P-7 PEEL18CV8PI-10 PEEL18CV8PI-15 PEEL18CV8PI-25 PEEL18C

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
International CMOS Technology
Part No. PEEL18CV8P-10 PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV8P-5 PEEL18CV8P-7 PEEL18CV8PI-10 PEEL18CV8PI-15 PEEL18CV8PI-25 PEEL18CV8PI-5 PEEL18CV8PI-7 PEEL18CV8J-10 PEEL18CV8J-15 PEEL18CV8J-25 PEEL18CV8J-5 PEEL18CV8J-7 PEEL18CV8JI-10 PEEL18CV8JI-15 PEEL18CV8JI-25 PEEL18CV8JI-5 PEEL18CV8JI-7 PEEL18CV8S-10 PEEL18CV8S-15 PEEL18CV8S-25 PEEL18CV8S-5 PEEL18CV8S-7 PEEL18CV8SI-10 PEEL18CV8SI-15 PEEL18CV8SI-25 PEEL18CV8SI-5 PEEL18CV8SI-7 PEEL18CV8 18CV8 PEEL18CV8TI-7 PEEL18CV8T-10 PEEL18CV8T-15 PEEL18CV8T-25 PEEL18CV8T-5 PEEL18CV8T-7 PEEL18CV8TI-10 PEEL18CV8TI-15 PEEL18CV8TI-25 PEEL18CV8TI-5
OCR Text ...nchronous clear will set Q LOW, regardless of the clock state. If both terms are satisfied simultaneously, the clear will override the preset. s At each input-line/product-term intersection, there is an EEPROM memory cell that determi...
Description CMOS Programmable Electrically Erasable Logic Device 的CMOS电可擦除可编程逻辑器件
CMOS Programmable Electrically Erasable Logic Device CMOS电可擦除可编程逻辑器件
GBASE 350 C5E PNK STRANDED BLK 500FT

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