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  removed rib on base to case Datasheet PDF File

For removed rib on base to case Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Filtran Ltd.
Filtran, Ltd.
Part No. 8342 8343 8344 8341
Description RJ-45 Single Port Connector with LEDs Intergrated Magnetics 1000 base-T 个RJ - 45单端口连接器与LED集成1000 base - T

File Size 192.81K  /  1 Page

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    EPG4013S-RC EPG4013S-RCTR

Samsung Semiconductor Co., Ltd.
PCA ELECTRonICS INC.
Part No. EPG4013S-RC EPG4013S-RCTR
Description DATACOM TRANSFORMER FOR 10/100 base-TX; 1000 base-T APPLICATIon(S) ROHS COMPLIANT
1000base-T Module

File Size 18.67K  /  1 Page

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    EPG4001S EPG4001S-RC EPG4001S-15

PCA ELECTRonICS INC.
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
Samsung Semiconductor Co., Ltd.
Part No. EPG4001S EPG4001S-RC EPG4001S-15
Description 11000base-T Module
DATACOM TRANSFORMER FOR 10/100 base-TX; 1000 base-T APPLICATIon(S) ROHS COMPLIANT

File Size 19.97K  /  1 Page

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    40ST1025-1S

Bothhand USA, LP.
Part No. 40ST1025-1S
Description 40 PIN SMD QUAD 10 base-T/100 base-TX TRANSFORMER

File Size 207.45K  /  1 Page

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Part No. EPG4012S
Description DATACOM TRANSFORMER FOR 10/100 base-TX; 1000 base-T APPLICATIon(S)

File Size 33.16K  /  1 Page

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    40ST1025-1 40ST1025-1M

Bothhand USA, LP.
Part No. 40ST1025-1 40ST1025-1M
Description 40 PIN SMD QUAD 10 base-T/100 base-TX TRANSFORMER

File Size 207.63K  /  1 Page

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    AI-2331-TWT-R

Projects Unlimited, Inc.
Part No. AI-2331-TWT-R
Description ont color='#FF0000'>removedont> LEAD FREE NOTE ADDED RoHS

File Size 306.90K  /  1 Page

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    AI-3245-TF-LW95-R

Projects Unlimited, Inc.
Part No. AI-3245-TF-LW95-R
Description ont color='#FF0000'>removedont> LEAD FREE ADDED RoHS NOTE

File Size 178.53K  /  1 Page

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    1214-370V

STMicroelectronics N.V.
Microsemi Corporation
Part No. 1214-370V
Description L-Band 1200-1400 MHz, Class C, Common base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (&#181;sec): 330; Duty Cycle (%): 10; case Style: 55ST-1 RF POWER TRANSIStoR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz

File Size 225.51K  /  5 Page

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    G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343-32 G8211-21 G8797-32 G8211-11 G8211-12 G8211-22 G8211-31 G8211-32 G83

HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
Part No. G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343-32 G8211-21 G8797-32 G8211-11 G8211-12 G8211-22 G8211-31 G8211-32 G8340 G8340-11 G8340-12 G8340-21 G8340-22 G8340-31 G8340-32 G8797-11 G8797-12 G8797-21 G8797-22 G8797-31 G8797-31SC G8343-32FC G8211-11SC G8211-21SC G8340-11SC G8340-21SC
Description    InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大

File Size 99.99K  /  2 Page

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