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				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...DD = -28V --- I D = -38A ns --- rg = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...u rce C u rre n t (A ) -ID , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V - 8.0V -...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...VDD = -28V --- ID = -16A ns --- rg = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...u L S E W ID TH TJc==25C T 25 C A 0.1 1 10 100 -4 .5 V 20 s P u L S E W ID T H TJ = 17 5C TC = ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...VDD = -28V --- ID = -16A ns --- rg = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...u LS E W ID TH T c = 2 5C J A 0.1 1 10 100 -4 .5 V 20 s P u L S E W ID T H TC = 17 5C J 0.1 1 ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... VDD = 50V --- ID = 9.0A ns --- rg = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 -...u LS E W ID TH T J = 2 5C 10 100 A 1 0.1 1 2 0 s P u L S E W ID T H T J = 17 5C 10 100 ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIZ24NPBF
OCR Text	..., starting T J = 25C, L = 1.0mH rg = 25, IAS = 10A. (See Figure 12) ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; d...u.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 5 Fig 10a. Switching Time Test Cir...
Description	Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	207.62K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI520NPBF
OCR Text	...d 13 VDD = 50V ID = 5.7A ns rg = 22 RD = 8.6, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die con...u.T. + -V DD 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circu...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	254.93K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI1310NPBF IRFI1310NPBF-15
OCR Text	...10N data and test conditions rg = 25, IAS = 22A. (See Figure 12) ISD 22A, di/dt 180A/s, VDD V(BR)DSS, T J 175C IRFI1310NPbF ...u.T. + ID , Drain Current (A) -VDD 15 10V Pulse Width 1 s Duty Factor 0.1 % 10 ...
Description	ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	236.53K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7821PBF IRF7821TRPBF
OCR Text	... L DRIVER VDD D.u.T rg VGS 20V D.u.T IAS tp + V - DD VGS A 0.01 Pulse Width < 1s Duty Factor < 0.1% Fig 13a. unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit 90% VDS ...
Description	HEXFETPower MOSFET HEXFET㈢Power MOSFET HEXFET?Power MOSFET
File Size	284.07K / 10 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	Irg4BAC50W
OCR Text	...7A, VCC = 480V 57 86 VGE = 15V, rg = 5.0 0.08 -- Energy losses include "tail" 0.32 -- mJ See Fig. 9, 10, 14 0.40 0.5 31 -- TJ = 150C, 43 -- ...u la r w a v e : 80 D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as s pecified P o w...
Description	Insulated Gate Bipolar Transistor
File Size	161.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7809AVPBF
OCR Text	... applications * 100% Tested for rg * Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unp...u.T. + - VDD 8 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit...
Description	N-Channel Application-Specific MOSFETs
File Size	591.22K / 8 Page	View it Online	Download Datasheet

For rg u Found Datasheets File :: 14215 Search Time::2.297ms
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