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  superfet Datasheet PDF File

For superfet Found Datasheets File :: 242    Search Time::0.812ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FCA20N60S-F109 FCA20N60S
OCR Text superfet FCA20N60S 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested September 2006 TM Descr...
Description 600V N-Channel MOSFET

File Size 866.67K  /  9 Page

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    FCD5N60TF FCD5N60TM FCD5N60 FCU5N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FCD5N60TF FCD5N60TM FCD5N60 FCU5N60
OCR Text superfet FCD5N60 / FCU5N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.81 * Ultra low gate charge (typ. Qg=16nC) * Low effective output capacitance (typ. Coss.eff=32pF) * 100% avalanche tested TM Description ...
Description 600V N-Channel MOSFET

File Size 843.32K  /  9 Page

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    FCP4N60

Fairchild Semiconductor
Part No. FCP4N60
OCR Text ...2pF) * 100% avalanche tested superfet Description superfetTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower g...
Description 600V N-Channel MOSFET

File Size 743.13K  /  8 Page

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    FCA47N60 FCH47N60

Fairchild Semiconductor, Corp.
Part No. FCA47N60 FCH47N60
OCR Text superfet FCH47N60 / FCA47N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.058 * Ultra Low Gate Charge (typ. Qg = 210nC) * Low Effective Output Capacitance (typ. Cosseff. = 420pF) * 100% avalanche tested TM D...
Description 600V N-Channel MOSFET 47 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
   600V N-Channel MOSFET

File Size 661.38K  /  9 Page

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    FCP16N60

Fairchild Semiconductor
Part No. FCP16N60
OCR Text superfet FCP16N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested November 2005 TM Descrip...
Description 600V N-Channel MOSFET

File Size 846.28K  /  8 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text superfet FCB20N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.15 * Ultra low gate charge (typ. Qg = 75nC) * Low effective output capacitance (typ. Coss.eff = 165pF) * 100% avalanche tested TM Description Su...
Description 600V N-Channel superfet
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCB11N60 FCB11N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB11N60 FCB11N60TM
OCR Text superfet FCB11N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.32 * Ultra low gate charge (typ. Qg = 40nC) * Low effective output capacitance (typ. Coss.eff = 95pF) * 100% avalanche tested TM Description Sup...
Description 600V N-Channel superfet
600V N-Channel MOSFET

File Size 579.48K  /  8 Page

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    FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60

Fairchild Semiconductor
Part No. FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60
OCR Text superfet FCH20N60 / FCA20N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.15 * Ultra low gate charge (typ. Qg = 75nC) * Low effective output capacitance (typ. Coss.eff = 165pF) * 100% avalanche tested TM Desc...
Description 600V N-Channel superfet
600V N-Channel MOSFET
From old datasheet system

File Size 692.04K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
http://
Part No. FCP11N60 FCPF11N60
OCR Text superfet FCP11N60/FCPF11N60 General Description superfetTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanc...
Description 600V N-Channel superfet
superfet 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 807.57K  /  10 Page

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    FCP11N60F FCPF11N60F

FAIRCHILD[Fairchild Semiconductor]
Part No. FCP11N60F FCPF11N60F
OCR Text superfet FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.32 * Fast Recovery Type ( trr = 120ns) * Ultra Low Gate Charge (typ. Qg = 40nC) * Low Effective Output Capacitance (typ. Cosseff.=95pF) * ...
Description 600V N-Channel MOSFET

File Size 833.48K  /  10 Page

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