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IXYS
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| Part No. |
IXBH16N170 IXBT16N170
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| OCR Text |
... emitter, tab = collector g c e to-247 ad (ixbh) 98657 (9/99) symbol test conditions characteristic values (t j = 25 c, unless otherwise ...268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of t... |
| Description |
Discrete IGBTs
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| File Size |
48.93K /
2 Page |
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IXYS, Corp.
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| Part No. |
IXFH12N100Q
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| OCR Text |
to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c12a i ...268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of t... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.05Ω的N沟道增强型HiPerFET功率MOSFET) 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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| File Size |
118.15K /
4 Page |
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it Online |
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IXYS CORP
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| Part No. |
IXGH28N60B
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| OCR Text |
...imum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient ...268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .11... |
| Description |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
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| File Size |
55.06K /
2 Page |
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it Online |
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IXYS CORP
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| Part No. |
IXFH21N50
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| OCR Text |
to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 21n50 2...268aa (d 3 pak) ixfh/ixfm21n50 ixfh/ixfm24n50 ixft24n50 ixfh26n50 ixft26n50 ixys mosfets and igbts ... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.25惟??娌??澧?己??HiPerFET???MOSFET)
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| File Size |
68.65K /
2 Page |
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it Online |
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