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  transistor igbt n-chan dual 60 Datasheet PDF File

For transistor igbt n-chan dual 60 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    PerkinElmer, Inc.
Part No. IXSH35N100
Description transistor | igbt | n-chan | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| igbt的|正陈| 1KV交五(巴西)国际消费电子展| 35A条一(c)|采用TO - 247AD

File Size 755.38K  /  26 Page

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    IXYS, Corp.
Part No. IXGH24N60C
Description transistor | igbt | n-chan | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|采用TO - 247AD

File Size 142.21K  /  2 Page

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
Description transistor | igbt | n-chan | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INSULATED GATE BIPOLAR transistor Standard Speed igbt(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管igbt的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INSULATED GATE BIPOLAR transistor Standard Speed igbt(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete igbt in a D2-Pak package

File Size 150.68K  /  9 Page

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    HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S

Cypress Semiconductor, Corp.
Fairchild Semiconductor
Part No. HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S
Description transistor | igbt | n-chan | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展|7A一(c)|63AB
14A, 600V, UFS Series n-channel igbts

File Size 133.99K  /  7 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. GT5J331_SM GT5J311 GT5J331SM GT5J311SM
Description transistor | igbt | n-chan | 600V V(BR)CES | 5A I(C) | TO-263AB
N CHANNEL igbt(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL igbt(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

File Size 292.45K  /  6 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A
Description    5.3A, 1200V, NPT Series n-channel igbt
5.3A, 1200V, NPT Series n-channel igbt 5.3 A, 1200 V, n-chanNEL igbt, TO-252AA
transistor | igbt | n-chan | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, n-chanNEL igbt, TO-252AA

File Size 96.06K  /  8 Page

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    BSS138DW09 BSS138DW-7-F

Diodes Incorporated
Diodes, Inc.
Part No. BSS138DW09 BSS138DW-7-F
Description dual n-chanNEL ENHANCEMENT MODE FIELD EFFECT transistor
MOSFET dual n-chan 50V SOT363 200 mA, 50 V, 2 CHANNEL, n-chanNEL, Si, SMALL SIGNAL, MOSFET

File Size 104.29K  /  5 Page

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    IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL
Description 320 x 240 pixel format, LED or CFL Backlight 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.85V,@和VGE \u003d 15V的,集成电路\u003d 6.5A
transistor | igbt | n-chan | 600V V(BR)CES | 6.5A I(C) | TO-263AB
INSULATED GATE BIPOLAR transistor WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

File Size 233.71K  /  11 Page

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    HGT1S14N41G3VLS HGTP14N41G3VL

Intersil Corporation
Intersil, Corp.
Part No. HGT1S14N41G3VLS HGTP14N41G3VL
Description transistor | igbt | n-chan | 445V V(BR)CES | TO-220AB
14A, 410V n-channel, Logic Level, Voltage Clamping igbts(14A, 410V N沟道,逻辑电平,电压箝位igbts) 14A10V N沟道,逻辑电平,电压钳位的igbt(第14A10V 沟道,逻辑电平,电压钳位的igbt

File Size 146.04K  /  8 Page

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    California Eastern Laboratories Inc
Part No. NE72084
Description transistor,MESFET,n-chan,5V V(BR)DSS,MICRO-X
From old datasheet system

File Size 250.85K  /  7 Page

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For transistor igbt n-chan dual 60 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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