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C68HC70 85102 2N3900 A22950 16C1003 U2N60 MAX910 C68HC70
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For uper Found Datasheets File :: 297    Search Time::1.328ms    
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    STM4431

SamHop Microelectronics Corp.
Part No. STM4431
OCR Text ... ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON). 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ...
Description P -CHANNEL E NHANCEMENT MODE F IELD E FFECT TRANSISTOR

File Size 577.53K  /  7 Page

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    STM4433

SamHop Microelectronics Corp.
Part No. STM4433
OCR Text ... 5 ID -6A R DS (ON) S uper high dense cell design for low R DS (ON). 35 @ V G S = -10V 50 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ...
Description P-CHANNEL E NHANCEMENT MODE MOSFET

File Size 613.11K  /  7 Page

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    STM4435

SamHop Microelectronics Corp.
Part No. STM4435
OCR Text ...ax ID -8A R DS (ON) S uper high dense cell design for low R DS (ON). 20 @ V G S = -10V 33 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ...
Description P-CHANNEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 669.59K  /  8 Page

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    STM4437A

SamHop Microelectronics Corp.
Part No. STM4437A
OCR Text ... ( m W ) Max F E AT UR E S S uper high dense cell design for low R DS (ON). -30V -10A 20 @ V G S = -10V 28 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S ...
Description P-CHANNEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 583.15K  /  7 Page

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    SAMHOP[SamHop Microelectronics Corp.]
Part No. SDT452AP SDT452
OCR Text ... ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON). 52 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. S OT-223 P ackage. D D D G S OT-223 S D G S OT-223 (J 23Z) S G S ABS OLUTE...
Description P -Channel E nhancement Mode F ield E ffect Transistor

File Size 343.03K  /  5 Page

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    SamHop Microelectronics
Part No. SDU40N03L SDUD40N03L
OCR Text ... 42A R DS (ON) ( m W ) S uper high dense cell design for low R DS (ON). 10 @ V G S = 10V 16 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD...
Description N-Channle Logic Level Enhancement Mode Field Effect Transistor

File Size 550.57K  /  7 Page

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    STD1855PL STU1855PL

SamHop Microelectronics Corp.
Part No. STD1855PL STU1855PL
OCR Text ...x ID -15A R DS (ON) S uper high dense cell design for low R DS (ON). 68 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S ...
Description P-Channel E nhancement Mode Field Effect Transistor

File Size 800.71K  /  8 Page

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    STD6025NLS STU6025NLS

SamHop Microelectronics Corp.
Part No. STD6025NLS STU6025NLS
OCR Text ... R DS (ON) 6 7.5 T yp S uper high dense cell design for low R DS (ON). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R...
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor

File Size 781.36K  /  9 Page

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    STG8207

SamHop Microelectronics Corp.
Part No. STG8207
OCR Text ...Max ID 8A R DS (ON) S uper high dense cell design for low R DS (ON). 16 @ V G S = 4.5V 24 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2...
Description Dual N-Channel E nhancement Mode F ield E ffect Transistor

File Size 611.85K  /  7 Page

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    STM4639

SamHop Microelectronics Corp.
Part No. STM4639
OCR Text ...5 ID -14A R DS (ON) S uper high dense cell design for low R DS (ON). 8.5 @ V G S = -10V 13 @ V G S = -4.0V R ugged and reliable. S urface Mount P ackage. E S D P rocteced S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unl...
Description P-Channel E nhancement Mode Field Effect Transistor

File Size 541.50K  /  8 Page

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