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vge Datasheet PDF File

For vge Found Datasheets File :: 5527 Search Time::0.984ms
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				Toshiba Semiconductor
Part No.	MG800J2YS50A
OCR Text	...ate resistance Symbol IGES ICES vge (off) VCE (sat) Cies vge RG td (on) tr Switching time ton td (off) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr Rth (j-c) Irtc IF = 800A, vge = 0V Tj = 25C...
Description	IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
File Size	206.63K / 7 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	MSAGX75F60A
OCR Text	..., Safe Operating Area (RBSOA) @ vge= 15V, L= 30H (clamped inductive load), R G= 2.7, Tj= 125C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Ou...
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	45.08K / 2 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	MSAGX75L60A
OCR Text	..., Safe Operating Area (RBSOA) @ vge= 15V, L= 30H (clamped inductive load), R G= 2.7, Tj= 125C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Ou...
Description	LJT 8C 8#20 PIN WALL RECP 75 A, 600 V, N-CHANNEL IGBT N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	47.77K / 2 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	MSAHX75L60C
OCR Text	..., Safe Operating Area (RBSOA) @ vge= 15V, L= 30H (clamped inductive load), R G= 2.7, Tj= 125C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Ou...
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	49.41K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW13N60UFD SGW13N60UFDTM
OCR Text	...Off Current G-E Leakage Current vge = 0V, IC = 250uA vge = 0V, IC = 1mA VCE = VCES, vge = 0V vge = vgeS, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics vge(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Satura...
Description	Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
File Size	594.42K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW13N60UF
OCR Text	...Off Current G-E Leakage Current vge = 0V, IC = 250uA vge = 0V, IC = 1mA VCE = VCES, vge = 0V vge = vgeS, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics vge(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Satura...
Description	Ultra-Fast IGBT
File Size	535.65K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW15N60 SGW15N60RUF
OCR Text	...circuit rated 10us @ TC = 100C, vge = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C ...
Description	Short Circuit Rated IGBT
File Size	554.64K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW15N60 SKB15N60 SKP15N60
OCR Text	... s IF 62 62 31 15 IFpul s vge tSC Ptot 62 20 10 139 V s W vge = 15V, VCC 600V, Tj 150C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SKP15N60, Thermal Resistance Parameter Charac...
Description	IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-Technology with An...
File Size	445.74K / 14 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BUP300 Q67078-A4203-A2
OCR Text	...18 AB 1200V 3.6A VCE VCGR vge IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 3.6 2.4 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 7.2 4.8 TC = 25 C TC = 90 C Avalanche energy, single...
Description	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) From old datasheet system
File Size	338.36K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BUP302 Q67078-A4205-A2
OCR Text	...218 AB 1000V 12A VCE VCGR vge IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 12 8 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 24 16 TC = 25 C TC = 90 C Avalanche energy, single puls...
Description	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) From old datasheet system High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的（低正向压降高开关速度低尾电流的无闩锁雪崩额定
File Size	419.23K / 7 Page	View it Online	Download Datasheet

For vge Found Datasheets File :: 5527 Search Time::0.984ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |