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AUK[AUK corp]
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| Part No. |
2SC5344U
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| OCR Text |
...OT-323
Outline Dimensions
2.0~2.2 1.2~1.3
unit : mm
1
1.8~2.2 1.2~1.4
3
0.2~0.4
2
0.8~1.0
KST-3029-001
0~0.1
0.1 Min.
0.1~0.2
PIN Connections 1. Base 2. Emitter 3. Collector
1
2SC5344U
Absolute max... |
| Description |
NPN Silicon Transistor
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| File Size |
235.34K /
4 Page |
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AUK[AUK corp]
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| Part No. |
2SC5345N
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| OCR Text |
...: Cob=1.4pF (Typ.) @[VCB=6V, IE=0] Low base time constant and high gain Excellent noise response
Ordering Information
Type NO. 2SC5345N Marking C5345 Package Code TO-92N
Outline Dimensions
unit : mm
4.20~4.40
4.20~4.40
2.25... |
| Description |
NPN Silicon Transistor
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| File Size |
259.63K /
4 Page |
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Panasonic
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| Part No. |
2SD1264A 2SD1264
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| OCR Text |
..., 2S0940A
16.70.3
Unit: mm
0.70.1
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
Features
* High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC * Full-pack package which can be installed to... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
73.55K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1275A 2SD1275
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| OCR Text |
0.70.1
For power amplification Complementary to 2SB949 and 2SB949A
Unit: mm
10.00.2 5.50.2 2.70.2
4.20.2
4.20.2
q q
16.70.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be ... |
| Description |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
Silicon PNP epitaxial planar type Darlington
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| File Size |
60.79K /
2 Page |
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Panasonic
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| Part No. |
2SD1275A 2SD1275
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| OCR Text |
0.70.1
10.00.2 5.50.2 4.20.2 2.70.2
For power amplification Complementary to 2SB0949 and 2SB0949A
* High forward current transfer ratio hFE * High-speed switching * Full-pack package which can be installed to the heat sink with one scr... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
82.22K /
4 Page |
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Panasonic
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| Part No. |
2SD1499
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| OCR Text |
...ne screw.
16.70.3
Unit: mm
0.70.1
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
3.10.1
Solder Dip (4.0)
1.40.1
1.30.2 0.5+0.2 -0.1
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter ope... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
79.83K /
4 Page |
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Panasonic
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| Part No. |
2SD2375
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| OCR Text |
...0.5
3.20.1
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
77.92K /
4 Page |
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Sanken
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| Part No. |
2SD2389
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| OCR Text |
...Hz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
B
(7 0 )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)
(Ta=25C) Unit V V V A A W C C
Application : Audio, Series Regulator and Ge... |
| Description |
Silicon NPN Triple Diffused Planar Transistor(Audio/ Series Regulator and General Purpose)
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| File Size |
29.12K /
2 Page |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
2SK3579-01MR
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| OCR Text |
...ge VISO *6 2 kVrms < < < < *1 L=0.67mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS< 250V = *5 VGS=-20V *6 t=60sec f=60Hz Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/d... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
111.70K /
4 Page |
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Price and Availability
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