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ST Microelectronics
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Part No. |
STB20NM50FD-1 STP20NM50FD
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OCR Text |
0.22 - 20A TO-220/I2PAK
*Q )
g
STP20NM50FD STB20NM50FD-1
FDmeshTM Power MOSFET (with FAST DIODE)
VDSS 500V 500V RDS(on) <0.25 <0.25 Rds(on)*Qg 8.36 *nC 8.36 *nC ID 20 A 20 A
TYPE STP20NM50FD STB20NM50FD-1
s s s s s s
TYP... |
Description |
N-CHANNEL 500V 0.22 OHM 20A TO-220/I2PAK FDMESH POWER MOSFET
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File Size |
261.16K /
9 Page |
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Linear
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Part No. |
LT1641-1 164112F
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OCR Text |
...V Input Voltage Application
RS 0.01 Q1 IRF530 VOUT SHORT PIN R1 49.9k 1% R5 10 5% D1 CMPZ 5248B C1 R6, 10nF 1k, 5% 8 *SMAT70A VCC 1 ON LT16...20 100 18 18 - 132 5 1.355 1.245
164112f
2
U
W
U
U
WW
W
LT1641-1/LT1641-2... |
Description |
9V to 80V, SO-8, Active Current Limiting, Latched Mode From old datasheet system
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File Size |
148.93K /
12 Page |
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Motorola, Inc.
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Part No. |
MC3392T-1
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OCR Text |
...5C Plastic Power SOP(8+8)L
Rev 0
MC3392T Gnd MC3392T-1 MC3392DW
(c) Motorola, Inc. 1996
MOTOROLA ANALOG IC DEVICE DATA
1
MC...20 25 10 80
V mA V A A
11 12 -
tr tf - td -
2
MOTOROLA ANALOG IC DEVICE DATA
MC33... |
Description |
LOW SIDE PROTECTED SWITCH
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File Size |
201.72K /
12 Page |
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ST Microelectronics
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Part No. |
STB55NF06-1
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OCR Text |
0.015 w - 50a to-220/to-220fp/i 2 pak/d2pak stripfet? ii power mosfet n typical r ds (on) = 0.015 w n exceptional dv/dt capability n 100...20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 50 50(*) ... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
569.58K /
12 Page |
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Tripath Technology
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Part No. |
RB-TA3020-1 RB-TA3020-2
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OCR Text |
...echnical Information Revision 3.0- March 2002
GENERAL DESCRIPTION The RB-TA3020 reference board is based on the TA3020 digital audio powe...20% for overhead and margin. The TA3020 amplifier also requires a supply, VN10, that is 10V more pos... |
Description |
(RB-TA3020-1/-2) CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD
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File Size |
761.02K /
20 Page |
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STMicroelectronics N.V.
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Part No. |
STD12NF06-1
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OCR Text |
0.08 w - 12a ipak/dpak stripfet ? ii power mosfet n typical r ds (on) = 0.08 w n exceptional dv/dt capability n low gate charge n through-h...20 v i d drain current (continuos) at t c =25 c 12 a i d drain current (continuos) at t c = 100 c ... |
Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 12A条(丁)|51AA
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File Size |
174.97K /
10 Page |
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