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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4521 IGW60T120
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| OCR Text |
...e Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C
1)
Symbol VCE IC
Value 1200 100 60
...350W
80A
250W 200W 150W 100W 50W 0W 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
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| Description |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
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| File Size |
404.35K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD2943
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| OCR Text |
...o Case thermal resistance Value 0.27 Unit C/W
Symbol RthJC
3/14
1 Electrical Data
SD2943
1.3
Table 3.
Electrical Characteristics (TCASE = 25C)
Static
Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V ... |
| Description |
RF Power Transistor HF/VHF/UHF N - Channel MOSFETs
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| File Size |
157.71K /
14 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW25N120
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| OCR Text |
...perature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C
2
C
E
PG-TO-247-3-21 (TO-247AC)
VCE ...350W 300W 250W 200W 150W 100W 50W 0W 25C
60A
50A
IC, COLLECTOR CURRENT
Ptot, POWER DISSI... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
333.32K /
13 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STW18NK80Z_06 STW18NK80Z STW18NK80Z06
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| OCR Text |
0.34 - 19A - TO-247 Zener-protected SuperMESHTM Power MOSFET
General features
Type STW18NK80Z
VDSS 800V
RDS(on) <0.38
ID 19A
pW 350W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low... |
| Description |
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH?/a> Power MOSFET
N-channel 800V - 0.34ヘ - 19A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
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| File Size |
244.01K /
14 Page |
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it Online |
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TRIPATH[Tripath Technology Inc.]
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| Part No. |
TA0104A
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| OCR Text |
...s
"Audiophile" Sound Quality 0.02% THD+N @ 300W, 8 0.02% IHF-IM @ 100W, 8 350W @ 8, 0.1% THD+N, Vs = +90V 500W @ 4, 0.1% THD+N, Vs = +90V High Power 450W @ 8, 1% THD+N, Vs = +90V 750W @ 4, 1% THD+N, Vs = +90V High Efficiency 90% @ 400W @... |
| Description |
STEREO 500W (4? CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY
STEREO 500W (4з) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY
STEREO 500W (4 Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER
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| File Size |
270.06K /
18 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
W13NK100Z STW13NK100Z STW13NK100Z_06 STW13NK100Z06
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| OCR Text |
0.56 - 13A - TO-247 Zener - Protected SuperMESHTM PowerMOSFET
General features
Type STW13NK100Z
VDSS (@Tjmax) 1000 V
RDS(on)
ID
PW
< 0.70 13 A 350W
Extremely high dv/dt capability 100% avalanche tested Gate charge... |
| Description |
N-channel 1000V - 0.56?/a> - 13A - TO-247 Zener - Protected SuperMESH?/a> PowerMOSFET
N-channel 1000V - 0.56з - 13A - TO-247 Zener - Protected SuperMESH⑩ PowerMOSFET
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| File Size |
289.69K /
14 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD2942
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| OCR Text |
...o Case thermal resistance Value 0.35 Unit C/W
Symbol RthJC
3/14
1 Electrical Data
SD2942
1.3
Table 3.
Electrical Characteristics (TCASE = 25C)
Static (per section)
Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10... |
| Description |
RF Power Transistors HF/VHF/UHF N - Channel MOSFETs
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| File Size |
325.95K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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