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				IRF[International Rectifier]
Part No.	IRFP3703
OCR Text	...ed VDSS 30V RDS(on) max 0.0028 ID 210A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC ...6mH RG = 25, I AS = 76A. ISD 76A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Calculated conti...
Description	Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?) HEXFET? Power MOSFET
File Size	163.88K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ5050KTR VNQ5050KTR-E VNQ5050K-E
OCR Text	...CC 41V OUTPUT CURRENT: 12A 3.0 V CMOS COMPATIBLE INPUT s STATUS DISABLE s ON STATE OPEN LOAD DETECTION s OFF STATE OPEN LOAD DETECTION s ...6mH IOUT=0.1A (see fig. 6) Tj= -40C...+150C Note: 3. To ensure long term reliability under heavy ...
Description	QUAD CHANNEL HIGH SIDE DRIVER FOR AUTOMOTIVE APPLICATIONS
File Size	103.28K / 13 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ05XSP1613TR VNQ05XSP16
OCR Text	...d pin disconnection. Value 41 -0.3 Internally limited -5 +/- 10 -3 +15 -200 4000 2000 5000 5000 78 76 Internally limited - 40 to 150 -55 to...6mH IOUT=0.1A Tj=-40C...+150C 15 175 Test Conditions Min 5 Typ 7.5 Max 10 10 200 Unit A A C C C V mV...
Description	QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
File Size	246.04K / 17 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	IRFB20N50K IRFB20N50KPBF
OCR Text	... VDSS 500V RDS(on) typ. 0.21 ID 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanch...6mH, RG = 25, IAS = 20A, Pulse width 400s; duty cycle 2%. 2 www.irf.com IRFB20N50K ...
Description	20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SMPS MOSFET HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	113.37K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL630S 2288 IRL630STRR IRL630STRL
OCR Text	...ation. VDSS = 200V RDS(on) = 0.40 ID = 9.0A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = ...6mH RG = 25, IAS = 9.0A. (See Figure 12) IRL630S 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2....
Description	200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package From old datasheet system HEXFET? Power MOSFET
File Size	173.42K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL630 2287
OCR Text	...ustry. VDSS = 200V RDS(on) = 0.40 ID = 9.0A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS ...6mH R G = 25, IAS = 9.0A. (See Figure 12) IRL630 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2....
Description	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package From old datasheet system HEXFET? Power MOSFET
File Size	148.89K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2FLL APT20M16LFLL
OCR Text	0.016W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power...6mH, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature 6 dv/ dt numb...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	59.15K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2LL APT20M16LLL
OCR Text	0.016W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...6mH, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature 6 dv/ 1 Re...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	57.64K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA8N80C
OCR Text	...tion (TC = 25C) 850 8.4 22 4.0 220 1.75 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead temper...6mH, IAS = 8.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.4A, di/dt 200A/s, VDD BVDSS, Sta...
Description	800V N-Channel Advance Q-FET C-Series 800V N-Channel MOSFET From old datasheet system
File Size	600.35K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQD7P06 FQU7P06 FQD7P06TF FQD7P06TM FQU7P06TU
OCR Text	... * * * * -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche ...6mH, IAS = -5.4A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -7.0A, di/dt 300A/s, VDD BVDSS, ...
Description	60V P-Channel MOSFET 60V P-Channel QFET
File Size	663.89K / 9 Page	View it Online	Download Datasheet

For 0.6mh Found Datasheets File :: 470 Search Time::1.484ms
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